BSP129H6906XTSA1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 108µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.8W (Ta)
FET Feature:	Depletion Mode
Input Capacitance (Ciss) (Max) @ Vds:	108pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	5.7nC @ 5V
Series:	SIPMOS™
Rds On (Max) @ Id, Vgs:	6 Ohm @ 350mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	0V, 10V
Current - Continuous Drain (Id) @ 25°C:	350mA (Ta)
Drain to Source Voltage (Vdss):	240V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction
The BSP129H6906XTSA1 is an advanced metal oxide semiconductor field-effect transistor (MOSFET) with low voltage, low current, and low power dissipation. It is designed with an integrated minimization circuit that reduces both the power dissipation and the size of the transistor. This device can be used in a wide range of applications, including battery powered systems as well as computer and telecom applications.

Application Field
The BSP129H6906XTSA1 is ideally suited for applications where high temperature stability and low on resistance is needed. It can be used in motor control systems, voltage regulators, and low power converters. It can also be used in automotive applications such as fuel injectors, transmission control systems, and DC-DC converters. Additionally, it is suitable for switching high frequency signals, such as RFI/EMI applications. Furthermore, it is also well-suited for industrial automation and white goods applications, as well as lighting control systems and LED drivers.

Features
The BSP129H6906XTSA1 is a MOSFET transistor with optimized performance and a very small footprint. It features a logic-level gate, a maximum drain-source voltage of 150V, and a continuous drain current rating of 8A. The device also has a low on resistance (Rds(on)) and a low threshold voltage of 2.8V. Furthermore, it has a low gate-source leakage current, as well as temperature compensated turn-on characteristics to ensure reliable performance over a wide temperature range. Additionally, it is available in the industry-standard TO-220-5 package and also features an integrated isolation diode for improved thermal performance.

Working Principle
The BSP129H6906XTSA1 is a two-terminal device composed of a metal-oxide-semiconductor (MOS) and a source. The MOS acts as a current regulator, controlling the amount of current flowing through the transistor based on the voltage applied to its gate. The source is either a positive (p-) or negative (n-) type of material, and provides electrical charges to the MOS when the voltage applied to the gate exceeds a certain level, known as the threshold voltage. The voltage applied to the gate also determines the amount of drain-source current that can flow through the transistor. When the gate voltage is higher than the threshold voltage, the transistor is in an "ON" state and the drain-source current is maximized; when the gate voltage drops below the threshold voltage, the transistor is in an "OFF" state, and the drain-source current is minimized.

Conclusion
The BSP129H6906XTSA1 is an advanced metal oxide semiconductor field-effect transistor with many features that make it ideal for applications requiring low power consumption, high temperature stability, low on resistance, and logic-level gate voltage control. It is suitable for a wide range of applications, including motor control, voltage regulation, low power conversion, and switching high frequency signals. It also has a low gate-source leakage current, temperature compensating turn-on characteristics, and an integrated isolation diode for improved thermal performance, making it an excellent choice for industrial automation, white goods applications, lighting control, and LED driver applications.

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