C2M0025120D Discrete Semiconductor Products

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The C2M0025120D is a high efficiency, low-on resistance N-channel enhancement-mode vertical DMOS transistor built on STMicroelectronics’ advanced Through-Silicon-Vias (TSV) process technology. It was designed specifically for use in power switching applications such as those encountered in automotive electrical and electronic systems,rugged industrial systems and advanced high-efficiency power supplies. This transistor is available in a variety of packages, including SMD, SMA and SOT-223.

The C2M0025120D is an enhancement-mode device, meaning it requires an external bias circuit to operate. The bias circuit is responsible for supplying the necessary gate-source voltage to “activate” the device. When the externally applied gate-source voltage exceeds the threshold voltage, the device begins to conduct, allowing current to flow through it.

When the source is connected to the lower voltage and the drain is connected to the higher voltage, the current starts flowing through it. The current flowing through it is dependent on the gate-source voltage. With the correct gate-source voltage, the C2M0025120D will be able to handle currents up to 7.5A. The device has a continuous drain current rating of 2A and a peak drain current rating of 7.5A. The C2M0025120D has an operating voltage range from 2.3V to 20V. At higher voltages, its on resistance is much lower than that of other transistors. Its on resistance can be as low as 40mΩ at 20V.

This device is also very efficient. It has a low gate charge, making it fast and efficient. In addition, it has a low gate-to-drain capacitance which reduces losses associated with switching. Finally, it has an integrated Schottky Diode, which protects the transistor from reverse voltage and reduces power losses during switching.

The C2M0025120D has several potential uses, including in power switching applications such as those found in automotive electrical and electronic systems, rugged industrial systems, and advanced high-efficiency power supplies. It is an ideal device for applications requiring high power handling and improved efficiency.

In conclusion, the C2M0025120D is a low-on resistance, high-efficiency N-channel enhancement-mode vertical DMOS transistor designed and built on STMicroelectronics’ advanced Through-Silicon-Vias (TSV) process technology. It is suitable for a wide range of applications, including in power switching, automotive electrical and electronic systems, rugged industrial systems, and advanced high-efficiency power supplies. The C2M0025120D offers improved efficiency and power handling, making it an ideal choice for these applications.

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