Allicdata Part #: | C2M0280120D-ND |
Manufacturer Part#: |
C2M0280120D |
Price: | $ 4.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | MOSFET N-CH 1200V 10A TO-247-3 |
More Detail: | N-Channel 1200V 10A (Tc) 62.5W (Tc) Through Hole T... |
DataSheet: | C2M0280120D Datasheet/PDF |
Quantity: | 8047 |
1 +: | $ 4.48560 |
Vgs(th) (Max) @ Id: | 2.8V @ 1.25mA (Typ) |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 259pF @ 1000V |
Vgs (Max): | +25V, -10V |
Gate Charge (Qg) (Max) @ Vgs: | 20.4nC @ 20V |
Series: | Z-FET™ |
Rds On (Max) @ Id, Vgs: | 370 mOhm @ 6A, 20V |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The C2M0280120D is a Silicon N-Channel MOSFET that is optimized for low-voltage, high-current applications. It is designed to meet the demanding requirements of automotive and portable electronics applications, where it is used for power switching in place of traditional transistors. The device is also suitable for applications in audio and visual technology, heavy equipment, and consumer electronics.
The C2M0280120D is a high-performance depletion mode N-channel MOSFET. It has an exceptionally low on-resistance, which allows it to switch large amounts of current with minimal losses. The device has a maximum junction temperature rating of 150°C, a voltage breakdown rating of 28V, and a Drain-Source breakdown voltage rating of 20V. It is capable of handling up to 40A of continuous current and can handle pulsed currents of up to 80A.
The main advantage of the C2M0280120D is its ability to switch high volumes of current with minimal losses. To enable this feature, the device has a 4.5R on-resistance rating and an exceptionally low gate capacitance, which ensures low switching time. The device is also designed for low power consumption. This can be used to reduce the cost of power supply design, as well as to improve the efficiency of the overall system.
The C2M0280120D has a wide range of uses in automotive applications. It is commonly used as an automotive switch to power accessories such as headlights and tail lights, as well as for low-voltage accessories such as seat heaters, heated washer jets, and audio systems. The device can also be used in fuel injection systems, voltage regulators, and wiper control modules.
The working principle of the C2M0280120D is based on the flow of electrical current through the device when a voltage is applied across its gate and drain terminal. The device is configured in such a way that when a voltage is applied across its gate and drain terminals, the MOSFET switches on. This allows current to flow from the drain to the source terminal. When the voltage is reversed, the device switches off, preventing current from flowing through the MOSFET.
The C2M0280120D has many advantages, including its low on-resistance, high current handling ability, and its wide temperature range. It has a wide range of applications in automotive and portable electronic applications. The device is well suited to power switching purposes, as its low on-resistance and high current rating enable it to switch large currents with minimal losses.
The specific data is subject to PDF, and the above content is for reference
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