C2M0160120D

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The C2M0160120D is an N-Channel Power MOSFET, manufactured by ON Semiconductor, that is widely used in a wide range of applications. The device is made up of a double-diffused MOSFET (D-MOSFET) structure and has a low drain-source on-resistance, low gate charge, low body-diode forward voltage, and excellent gate-drive capability. This makes it an ideal choice for a variety of applications, including switching and power conversion, motor controls, and consumer and industrial electronics.

C2M0160120D applications

The C2M0160120D is well-suited for a wide range of power management applications. Some of the most common applications include:

• Switching regulator/DC-DC converters
• Battery chargers
• Power amplifiers
• Surge protectors
• DC motor-control circuits
• Ultra-low-power DC-DC converters

It can also be used in a variety of industrial and consumer applications, such as audio amplifiers, medical equipment, light dimmers, and motor control circuits.

Working principle

A MOSFET is a type of Field-Effect Transistor (FET) that works by controlling the amount of current that can flow between its drain and source electrodes. The C2M0160120D has an N-channel MOSFET, which means that its drain-source channels are formed by N-type channel material. This channel is “opened” by applying a positive voltage to the gate, allowing current to flow between the drain and source. When a negative voltage is applied to the gate, the channel is “closed”, preventing current from flowing.

The device’s low drain-source on-resistance and low gate charge, along with its excellent gate-drive capability, make it ideal for fast switching applications. It also has very low power losses, making it ideal for power management applications such as switching regulator/DC-DC converters and battery chargers.

The device’s low body-diode forward voltage also makes it ideal for a variety of other applications, such as DC motor control and surge protection. And because it has a double-diffused MOSFET structure, it is also well-suited for high voltage applications.

Conclusion

The ON Semiconductor C2M0160120D offers a host of features and benefits that make it an ideal choice for a variety of applications, ranging from switching and power conversion to motor controls and consumer and industrial electronics. Its low drain-source on-resistance and low gate charge, low body-diode forward voltage, and excellent gate-drive capability make it an excellent choice for fast switching applications, while its double-diffused MOSFET structure means it can also handle high voltage applications.

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