C2M0080170P

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The C2M0080170P device is a high-performance, low-voltage, silicon-on-insulator (SOI) enhancement-mode power field-effect transistor (FET). This FET has been developed primarily for use in power electronics applications such as switchmode power supplies and motor control. The C2M0080170P integrates numerous features that enable high performance and low cost power systems design.

The C2M0080170P combines several features to create a robust low voltage FET that meets the performance requirements of power electronics application. The device features a low maximum drain-source on-state resistance of 100 milliohms or less, which enables the construction of efficient switchmode power supplies. In addition, it offers an ultra-low reverse transfer capacitance for fast switching and higher operating frequency. Additionally, its low RDS(ON) offers excellent immunity to variations in operating temperature and other external perturbations.

The C2M0080170P has a low gate charge of less than 10 nC and a low input capacitance for faster rise and fall times, making it ideal for applications requiring fast switching performance. The device also features high-current carrying capacity, with a maximum drain current rating of 1.8 A. In addition, it has low threshold voltage and high transconductance, making it suitable for high-efficiency applications where the output impedance must remain constant.

The C2M0080170P utilizes a source-drain structure and MOSFET (metal-oxide-semiconductor field-effect transistor) technology to create a high-performance low-voltage FET. This structure and technology allow the device to feature high-current carrying capacity and low gate charge. Additionally, its low-voltage operation enables it to perform over a wide range of temperatures and to withstand harsh environmental conditions. The C2M0080170P is suitable for applications such as motor drivers, switch-mode power supplies, and other consumer and industrial electronics.

The C2M0080170P is designed to handle high-currents efficiently while providing a low maximum drain-source on-state resistance. The FET operates over a wide range of operating temperature and provides excellent thermal and electrical performance. In addition, the device exhibits low threshold voltage and low reverse transfer capacitance for fast switching performance. The C2M0080170P is an ideal choice for applications requiring high-performance and low-voltage FETs, such as switch-mode power supplies, motor drivers, and other consumer and industrial electronics.

The C2M0080170P is available in a variety of packages. The package size and pinout configuration allows for easy integration into a system or circuit. In addition, the C2M0080170P is designed to provide easy installation and maintenance, which makes it a great choice for designers who don\'t have the time or resources to design their own FETs.

The C2M0080170P is a high-performance, low-voltage FET that offers excellent power management, thermal and electrical performance, and fast switching performance. This FET can be used in applications, such as switch-mode power supplies and motor control, where fast switching and efficiency are critical. The FET\'s size and pinout configuration allows for easy integration into a system or circuit, making it a great choice for designers who don\'t have the time or resources to design their own FETs.

The C2M0080170P is an excellent choice for applications requiring a high-performance, low-voltage FET. The FET offers high-current carrying capacity and low gate charge, which enables fast switching performance and improves efficiency. Additionally, it offers an ultra-low reverse transfer capacitance for faster rise and fall times and increased operating frequency. The device is available in a variety of packages, making it easy to integrate into a system or circuit. The C2M0080170P is an ideal solution for applications requiring a high-performance, low-voltage FET.

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