C2M0045170D

The C2M0045170D is a Logic Level Field Effect Transistor (FET) designed for high-speed switching applications. It is a single N-channel enhancement-mode MOSFET with a low on-state resistance and high off-state leakage current.

The C2M0045170D is primarily used to amplify low-current signals, where low on-state resistance is desired. It is suitable for use in low-voltage applications, such as those that require switching in the range of 30V or less. It is also ideal for applications where a fast switching speed and very low capacitance are needed.

The C2M0045170D offers low on-state resistance, high off-state leakage current, and low switching time. The on-state resistance can be as low as 1.2 mΩ, and the off-state leakage current can be as high as 1.5 mA. This allows the C2M0045170D to provide a low-power solution in applications such as switching circuits and power supplies.

The C2M0045170D also features a negative-gate voltage limit, which prevents the FET from being over-driven or damaged by an excessive voltage. This feature also allows for improved device protection against electrostatic discharge (ESD) conditions.

The working principle of the C2M0045170D is simple. When the gate voltage is below the threshold voltage, the channel resistance is high, and the device is "off". When the gate voltage is above the threshold voltage, the channel resistance decreases, and the device is "on".

The C2M0045170D is commonly used in switching circuits, power supplies, and power management systems. It has applications in various consumer electronics such as TVs, computers, and cell phones, as well as industrial applications such as robotics and automotive systems.

In summary, the C2M0045170D is a single N-channel enhancement-mode MOSFET. It is suitable for low-voltage applications, and it features low on-state resistance and high off-state leakage current. The working principle of the device is simple, and it can be used in a variety of consumer and industrial applications.