C2M0080120D

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C2M0080120D is a state-of-the-art, high voltage, high performance, N-channel Enhancement Mode Field Effect Transistor (FET). It is a modern, efficient and compact device that is widely used in many applications. It has excellent temperature stability, wide dynamic range, good reliability and low gate drive power requirements. The C2M0080120D is fast switching, low-noise and low-on-resistance, making it an ideal choice for high speed, low-noise and medium-to-high voltage loads.

The C2M0080120D (200V, 8A, 0.01Ohm) enables designers to reduce system power consumption by minimizing the required voltage and current to drive the load. The device has a high withstand voltage rating, allowing it to operate in high temperature environments, such as automotive and industrial applications. It also offers a high breakdown voltage that is suitable for medium to high voltage circuits.

The working principle of the C2M0080120D is based on electrostatic operation. When the gate voltage is increased, the field-effect transistors (FETs) source to drain conduction increases, due to the electrostatic attraction between the gate and the source. This allows the current to flow across the source to the drain. As a result, greater control and higher efficiency can be achieved.

C2M0080120D can be used in a variety of industries, applications and systems. It is ideal for space power applications, such as Space Photography systems, Space Telescopes and Space Imaging Systems, as well as for consumer electronics, home appliances, telecommunications, industrial, automotive and consumer medical equipment applications. It is also used in power management systems, switchmode power supplies and driver circuits.

C2M0080120D is also an ideal choice for high speed switch/alarm applications, in which the device must be able to handle large current and voltage loads. It can be used in applications such as battery management, data acquisition or monitoring systems, interrupting of activating signals, conversion of logic levels, and frequency control. The device also finds use in radio frequency applications.

In summary, C2M0080120D is a high performance, high voltage FET. It provides excellent temperature stability and wide dynamic range, along with low gate drive power requirements. It offers excellent switching speeds with low-on-resistance and noise. The device is suitable for a broad range of applications, such as imaging systems, power management systems, switchmode power supplies, frequency control and radio frequency applications.

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