C2M0040120D Allicdata Electronics
Allicdata Part #:

C2M0040120D-ND

Manufacturer Part#:

C2M0040120D

Price: $ 24.83
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: MOSFET N-CH 1200V 60A TO-247
More Detail: N-Channel 1200V 60A (Tc) 330W (Tc) Through Hole TO...
DataSheet: C2M0040120D datasheetC2M0040120D Datasheet/PDF
Quantity: 1000
1 +: $ 22.57290
Stock 1000Can Ship Immediately
$ 24.83
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 10mA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 330W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1893pF @ 1000V
Vgs (Max): +25V, -10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V
Series: Z-FET™
Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V
Drive Voltage (Max Rds On, Min Rds On): 20V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Many different transistors are used in the modern market, with the C2M0040120D being one of the most popular ones. This transistor is a type of field-effect transistor (FET), more specifically a single-zone MOSFET. It is used for certain applications such as switching and nonlinear signal processing.

The C2M0040120D is a great choice for applications where low losses, high switching speed and low variation in power throughput is required. As an example, it can be used in motor control applications to help maintain motor speed regardless of loaded or unloaded conditions. It also is great for applications such as small-signal amplifiers and other low-noise or small-signal applications.

The design of this transistor makes use of a process referred to as "floating-gate" technology. This involves the use of a p-type substrate material, metal oxide layer and a metal layer, all of which are peripheral to the active transistor device. The metal oxide layer helps insulate the transistor from the other components, allowing the transistor to act as a switch rather than as a linear device.

The working principle of this type of transistor relies on the process of creating a channel from the source to the drain by using a transistor gate and applying a voltage to the gate. This process of forming a channel causes current to flow from the source to the drain. The more voltage applied, the wider the channel and the greater the amount of current that can flow.

The C2M0040120D is a great example of the modern day application field and working principle of transistors. It is easy to use, has a low variation in power throughput, and is able to perform a wide array of tasks in many different applications. With its high switching speed and low losses, it is certainly an excellent choice of transistor for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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