CGHV14800F

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The CGHV14800F transistor is an enhancement mode Gallium Nitride (GaN) high electron mobility transistor (HEMT). It is a type of field effect transistor (FET), specifically a metal–oxide–semiconductor FET (MOSFET). This type of transistor is commonly used in applications that require high-frequency operation, such as radio-frequency (RF) applications.

The CGHV14800F transistor is designed to operate over a frequency range of DC to 4 GHz. It has an output power of 100W (based on 12 dB gain). This makes it well suited to a variety of RF applications, including amplifiers, telecommunications and Wi-Fi.

The CGHV14800F transistor has an on-state resistance of 0.25 ohms at 4 GHz. This lower on-state resistance results in less power loss and improved performance. It also has a breakdown voltage of 20 volts and a high-voltage capacitance of greater than 0.2 pF, which improves the high-frequency response and stability of the transistor.

The CGHV14800F is a normally-off type MOSFET, meaning that when the gate voltage is left at zero, the transistor is off and no current can flow through the channel. To turn the transistor on, a positive gate voltage needs to be applied. This allows current to flow through the channel and results in amplification of the signal. This makes the CGHV14800F suitable for use in high-frequency switching applications, as well as linear amplification.

The CGHV14800F transistor is ideal for applications that require high power, low loss, and high-frequency operation. It can be used in a variety of RF applications such as amplifiers, Wi-Fi, telecommunications, and high-frequency switching. Its low on-state resistance, high breakdown voltage, and high-voltage capacitance make it a great choice for applications that require superior performance.

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