CGHV96050F2

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The CGHV96050F2 is a high power GaN on SiC RF transistor designed for Doherty amplifiers and other applications. It offers ultra-high linear operation with a maximum output power of 230 W and composite gain of 20 dB. This transistor is manufactured using a high-breakdown-voltage 8 HV silicon carbide die and advanced Gallium Nitride technology. The device has a robust design which offers superior thermal performance. It is also ideal for use in commercial and military applications.

The CGHV96050F2 has an LDMOS-type breakdown voltage with a maximum voltage rating of 8 HV. This provides excellent breakdown performance and robustness over temperature, voltage and current variations. The device offers higher current handling capability through its optimized active area geometry. The nominal on state resistance (RDSon) at 300 K is 3.6 Ohm which provides more efficient operation in higher-frequency applications.

The CGHV96050F2 provides high RF power output up to 230 W with high gain and efficiency. It is capable of providing over 70% efficiency at this power level, even with heavy and complex modulations. This device features an ultra-wide small-signal frequency range from 10 MHz to 10 GHz with excellent linear performance to ensure fast and reliable signal transmission over a wide range of frequencies. The integrated input ESD protection also ensures maximum system reliability.

The CGHV96050F2 offers superior thermal performance due to its robust packaging technology. This transistor is equipped with an extremely high thermal resistance (Junction-to-Case) that provides excellent thermal characteristics and fast operating temperature. The housing of the device is designed with integrated half-sine heat sinks which help to dissipate the heat quickly and effectively, allowing higher output power at higher ambient temperatures.

The CGHV96050F2 is a highly integrated RF transistor featuring several advanced technologies and an advanced semiconductor process. This device offers excellent gain, high power output, high linear performance, and a wide frequency range. Its robust design and high thermal resistance make it an ideal choice for high-power and high-frequency applications in commercial and military applications.

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