CGHV96100F2 Allicdata Electronics
Allicdata Part #:

CGHV96100F2-ND

Manufacturer Part#:

CGHV96100F2

Price: $ 497.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: RF MOSFET HEMT 40V 440210
More Detail: RF Mosfet HEMT 40V 1A 7.9GHz ~ 9.6GHz 10.2dB 131W ...
DataSheet: CGHV96100F2 datasheetCGHV96100F2 Datasheet/PDF
Quantity: 229
1 +: $ 452.05000
Stock 229Can Ship Immediately
$ 497.25
Specifications
Series: GaN
Packaging: Tray 
Part Status: Active
Transistor Type: HEMT
Frequency: 7.9GHz ~ 9.6GHz
Gain: 10.2dB
Voltage - Test: 40V
Current Rating: 12A
Noise Figure: --
Current - Test: 1A
Power - Output: 131W
Voltage - Rated: 100V
Package / Case: 440210
Supplier Device Package: 440210
Description

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Transistors are used in a variety of electronic applications, making them indispensable for many industries. The CGHV96100F2 transistor is an example of such a device. It is a gallium nitride field effect transistor (GaN FET) designed specifically for use in high power applications such as radio frequency (RF) power circuits. This article examines the application and working principles of the CGHV96100F2.

The CGHV96100F2 is a high-power switching element suitable for a range of RF power applications. It features a common source package design, with a drain-source voltage of 96V and a current of 100A. The device has a relatively high switching frequency capability of up to 1 GHz and is capable of delivering power levels up to 360 Watts. It has an extremely low on-resistance of 7 mΩ and can quickly switch between states with a typical fall time of 7 nanoseconds.

One of the major benefits of this device is its ability to efficiently manage large amounts of power, making it suitable for a range of high-powered applications. The device is suitable for use in Class D and Class E power amplifiers, switching supplies, inverters and high-frequency switching circuits. It is also suitable for use in microwave communication systems, power amplifiers and power converters. This wide range of compatible applications makes the CGHV96100F2 a highly versatile transistor.

The CGHV96100F2 operates on the same principle as other GaN FETs. When voltage is applied to the gate terminal via a current, electricity is allowed to flow through the transistor. This process is known as puddling and allows current to be switched on and off. The device operates in saturation, allowing the voltage and current to remain constant throughout the switching. Electrically, the CGHV96100F2 works in a similar way to a metal-oxide-semiconductor field-effect transistor (MOSFET).

The CGHV96100F2 also has multiple protection features. These include reverse current protection and lower source voltage protection. These features ensure that the device is able to operate under a variety of conditions and is ideal for use in high-powered applications.

The CGHV96100F2 is an excellent choice for use in a variety of high-power applications. Its low impedance, high switching frequency and wide range of compatible applications make it an ideal switching element for RF applications. Its protection features and robust design make it suitable for long-term use in demanding environments. With these features, the CGHV96100F2 is an essential component for many industries.

The specific data is subject to PDF, and the above content is for reference

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