CGHV22100F Allicdata Electronics
Allicdata Part #:

CGHV22100F-ND

Manufacturer Part#:

CGHV22100F

Price: $ 85.50
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: RF MOSFET HEMT 50V 440162
More Detail: RF Mosfet HEMT 50V 500mA 1.8GHz ~ 2.2GHz 20dB 100W...
DataSheet: CGHV22100F datasheetCGHV22100F Datasheet/PDF
Quantity: 101
1 +: $ 77.72310
Stock 101Can Ship Immediately
$ 85.5
Specifications
Series: GaN
Packaging: Tube 
Part Status: Active
Transistor Type: HEMT
Frequency: 1.8GHz ~ 2.2GHz
Gain: 20dB
Voltage - Test: 50V
Current Rating: 6A
Noise Figure: --
Current - Test: 500mA
Power - Output: 100W
Voltage - Rated: 125V
Package / Case: 440162
Supplier Device Package: 440162
Description

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CGHV22100F is a high-power silicon N-channel MOSFET (metal oxide semiconductor field effect transistor). This device features an enhanced thermal resistance, high input impedance, and low ON-resistance. It is suitable for harsh operating environments, making it capable of withstanding excessive temperatures and voltages. CGHV22100F is used in many applications, primarily radio frequency (RF) power amplifiers and high-power radar systems.

CGHV22100F is an RF-rated MOSFET which has been optimized to minimize thermal resistance, improve input impedance, and reduce ON-resistance. Its high-performance features allow it to operate at the extremely high frequencies and voltages used in radar systems. CGHV22100F also provides superior thermal performance, making it suitable for use in harsh environmental conditions.

The working principle of the CGHV22100F involves a flow of electrons through the gate of the MOSFET. When electric current is applied to the gate of the transistor, electrons are attracted to the gate and form an "inversion layer" around the gate. This inversion layer acts as an insulating barrier between the source and drain of the transistor. The channel between the source and drain is referred to as the "drain-source channel". The electric current flowing through the channel is controlled by the voltage applied to the gate.

By changing the voltage applied to the gate, the electric current flowing through the drain-source channel can be increased or decreased. This mode of control is referred to as electrical gating. CGHV22100F is capable of operating with a wide range of gate voltages and drive currents, which makes it suitable for use in high-power radio-frequency applications.

CGHV22100F can be used in applications such as power amplifiers, linear amplifiers, and radar systems. It is especially suitable for high-power radio-frequency transmission, as it can handle high voltages and frequencies. Additionally, its superior thermal performance allows it to be used in high-temperature or harsh environmental conditions. CGHV22100F is a reliable, high-performance device that is capable of handling a wide range of voltages and frequencies.

The specific data is subject to PDF, and the above content is for reference

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