CGHV35060MP Discrete Semiconductor Products

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The CGHV35060MP is a high voltage, high power field-effect transistor (FET) from Infineon Technologies. It has a maximum voltage limit of 350 V and a maximum power of 60 W. A FET is a type of transistor used to control signals or voltage, and is used in applications where a low-power device is required. The CGHV35060MP is an RF FET and is used in applications such as RF power amplifiers and RF switches in the 2 to 4 GHz frequency range. It is designed for use in microwave and radio-frequency amplifiers, and is suitable for both digital and analogue applications.

The CGHV35060MP is a depletion-mode FET, meaning that it requires a DC voltage to turn it "on" and allow current to flow; without the voltage it is "off" and no current passes through the device. It consists of a source, gate and drain electrodes, and is built on a silicon wafer with a substrate of silicon dioxide. The maximum current it can handle is 1 A, and its maximum operating temperature is 125⁰C. The CGHV35060MP is packaged in a standard SOT143 plastic surface mount package with an insulation rating of 2 kW.

The working principle of a FET is similar to that of a junction field-effect transistor (JFET). In a FET, the voltage applied to the gate controls the size of a channel between the source and the drain electrodes. When a voltage is applied to the gate, it creates a field which attracts charge carrier electrons to the gates and forms an inversion layer between the source and drain. This inversion layer is what enables current to flow through the device. The size of the channel can be adjusted by varying the gate voltage.

The CGHV35060MP has a variety of applications including RF power amplifiers, RF switches and antennas, antenna tuning, and microwave circuits. It is suitable for low-power applications such as digital radio, TV and radio broadcast, and wireless communication equipment. It is also suitable for analogue applications such as RF amplifiers, RF switches, RF attenuators, and high-voltage pumps. The CGHV35060MP is ideal for applications which require a high voltage and high power, in the 2 to 4 GHz frequency range. It is designed for use in microwave and radio-frequency amplifiers, and is suitable for both digital and analogue applications.

The CGHV35060MP is a high voltage, high power field-effect transistor (FET) suitable for use in RF applications such as RF power amplifiers, RF switches and antennas, antenna tuning, and microwave circuits. It consists of a source gate and drain electrodes, and is built on a silicon wafer with a substrate of silicon dioxide. It has a maximum voltage limit of 350 V and a maximum power rating of 60 W. Its working principle is similar to that of a JFET, in which the voltage applied to the gate controls the size of a channel between the source and the drain electrodes. By adjusting the gate voltage, the size of the channel can be adjusted, enabling current to flow through the device.

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