CGHV1F006S Discrete Semiconductor Products |
|
Allicdata Part #: | CGHV1F006STR-ND |
Manufacturer Part#: |
CGHV1F006S |
Price: | $ 27.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 40V 12DFN |
More Detail: | RF Mosfet HEMT 40V 60mA 6GHz 16dB 8W 12-DFN (4x3) |
DataSheet: | CGHV1F006S Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 25.12440 |
Specifications
Series: | GaN |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 6GHz |
Gain: | 16dB |
Voltage - Test: | 40V |
Current Rating: | 950mA |
Noise Figure: | -- |
Current - Test: | 60mA |
Power - Output: | 8W |
Voltage - Rated: | 100V |
Package / Case: | 12-VFDFN Exposed Pad |
Supplier Device Package: | 12-DFN (4x3) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction to CGHV1F006S
CGHV1F006S is a low-capacitance, high-voltage ultra-wideband RF MOSFET transistor designed for switching, amplifying and broadband noise applications found in many communication, networking and consumer electronic systems. The broad band nature of the transistor provides excellent performance at frequencies ranging from 10MHz to 10GHz. Its low-voltage gate threshold enables low-power operation, while the low-capacitance gate structure minimizes gate noise and switching transients. This ultra-wideband RF MOSFET is suitable for applications such as high-speed mixer, amplifier, microwave RF switching and high-end amplifier.CGHV1F006S Application Fields
The CGHV1F006S is a high-voltage RF MOSFET transistor that is suitable for use in systems requiring high performance. It is well suited for high frequency applications in the 10MHz to 10GHz range, such as in the following:Broadband Cell Phones
The CGHV1F006S is ideal for use in cell phones as it is able to provide high-performance switching and noise-free broadcasting over various frequency ranges. The low-voltage gate threshold of the device enables low-power operation, minimizing the battery consumption of the phone.High Speed Data Rate Modems
The CGHV1F006S can be used in modems to enhance the data rate when receiving or transmitting data. The low-capacitance of the device helps reduce the number of unwanted transients and distortions, thus improving the performance of the modem.High Speed Networking Devices
CGHV1F006S can be used for high value RF switching applications in routers and switches. It is suitable for high speed data transfer and data streaming over high frequency ranges, making it ideal for use in networking applications.CGHV1F006S Working Principle
The CGHV1F006S is a high voltage RF MOSFET transistor that works on the principle of controlling the flow of electrons. It consists of two regions: the source, which is an n-type region, and the drain, which is a p-type region. A gate voltage is applied between these two regions to control the flow of electrons. The voltage applied to the gate of the MOSFET is called the gate-source voltage or Vgs. When Vgs is low, it depletes the gate oxide and blocks the hole current, thus acting as an open switch. When Vgs is high, it will accumulate a large number of electrons at the gate oxide, resulting in a conducting channel between the source and drain. This process is known as electron inversion and is responsible for the device’s on-resistance, or RDS(on).In addition, the wide band nature of the device makes it capable of switching from 10MHz to 10GHz. This allows it to be used for high-frequency applications such as data rate modems, high speed routers and broadband cell phones.Conclusion
The CGHV1F006S is a low-capacitance, high-voltage RF MOSFET transistor designed for switching, amplifying and broadband noise applications. It can be used in a variety of applications ranging from cell phones to networks. It works on the principle of controlling the flow of electrons by applying a gate-source voltage between two regions, the source and the drain. The wide band nature of the device provides excellent performance at different frequency levels, allowing it to be used for high-speed signal processing and data streaming applications.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "CGHV" Included word is 40
Part Number | Manufacturer | Price | Quantity | Description |
---|
CGHV40050F | Cree/Wolfspe... | 139.58 $ | 59 | RF MOSFET HEMT 50V 440193... |
CGHV59070F | Cree/Wolfspe... | 206.3 $ | 113 | RF MOSFET HEMT 50V 440224... |
CGHV40100F | Cree/Wolfspe... | 240.44 $ | 173 | RF MOSFET HEMT 50V 440193... |
CGHV35150F | Cree/Wolfspe... | 252.81 $ | 29 | RF MOSFET HEMT 50V 440193... |
CGHV14250F | Cree/Wolfspe... | 254.91 $ | 86 | RF MOSFET HEMT 50V 440162... |
CGHV35400F | Cree/Wolfspe... | 472.05 $ | 91 | RF MOSFET HEMT 45V 440210... |
CGHV31500F | Cree/Wolfspe... | 474.61 $ | 63 | RF MOSFET HEMT 50V 440217... |
CGHV96100F2 | Cree/Wolfspe... | 497.25 $ | 229 | RF MOSFET HEMT 40V 440210... |
CGHV1J006D-GP4 | Cree/Wolfspe... | 23.28 $ | 110 | RF MOSFET HEMT 40V DIERF ... |
CGHV27015S | Cree/Wolfspe... | 23.44 $ | 250 | RF MOSFET HEMT 50V 12DFNR... |
CGHV60040D-GP4 | Cree/Wolfspe... | 29.34 $ | 620 | RF MOSFET HEMT 50V DIERF ... |
CGHV40100P | Cree/Wolfspe... | 240.44 $ | 224 | RF MOSFET HEMT 50V 440206... |
CGHV96050F2 | Cree/Wolfspe... | 317.87 $ | 48 | RF MOSFET HEMT 40V 440210... |
CGHV14800F | Cree/Wolfspe... | 625.6 $ | 57 | RF MOSFET HEMT 50V 440117... |
CGHV27200F | Cree/Wolfspe... | 146.06 $ | 73 | RF MOSFET HEMT 50V 440162... |
CGHV14500F | Cree/Wolfspe... | 424.84 $ | 220 | RF MOSFET HEMT 50V 440117... |
CGHV27030S | Cree/Wolfspe... | 35.41 $ | 500 | RF MOSFET HEMT 50V 12DFNR... |
CGHV1J070D-GP4 | Cree/Wolfspe... | 54.49 $ | 1099 | RF MOSFET HEMT 40V DIERF ... |
CGHV40030F | Cree/Wolfspe... | 104.15 $ | 125 | RF MOSFET HEMT 50V 440166... |
CGHV22100F | Cree/Wolfspe... | 85.5 $ | 101 | RF MOSFET HEMT 50V 440162... |
CGHV40320D-GP4 | Cree/Wolfspe... | 187.36 $ | 40 | RF MOSFET HEMT 50V DIERF ... |
CGHV40180F | Cree/Wolfspe... | 262.64 $ | 50 | RF MOSFET HEMT 50V 440223... |
CGHV40200PP | Cree/Wolfspe... | 269.44 $ | 162 | RF MOSFET HEMT 440199RF M... |
CGHV35060MP | Cree/Wolfspe... | 106.85 $ | 1000 | RF MOSFET HEMT 50V 20TSSO... |
CGHV22200F | Cree/Wolfspe... | 146.06 $ | 20 | RF MOSFET HEMT 50V 440162... |
CGHV1J025D-GP4 | Cree/Wolfspe... | 35.45 $ | 10 | RF MOSFET HEMT 40V DIERF ... |
CGHV60075D5-GP4 | Cree/Wolfspe... | 37.13 $ | 40 | RF MOSFET HEMT 50V DIERF ... |
CGHV60170D-GP4 | Cree/Wolfspe... | 108.62 $ | 20 | RF MOSFET HEMT 50V DIERF ... |
CGHV96050F1 | Cree/Wolfspe... | 317.87 $ | 13 | RF MOSFET HEMT 40V 440210... |
CGHV27060MP | Cree/Wolfspe... | 76.17 $ | 1000 | RF MOSFET HEMT 50V 20TSSO... |
CGHV1F006S | Cree/Wolfspe... | 27.64 $ | 1000 | RF MOSFET HEMT 40V 12DFNR... |
CGHV1F025S | Cree/Wolfspe... | 60.59 $ | 1000 | RF MOSFET HEMT 40V 12DFNR... |
CGHV59350F | Cree/Wolfspe... | 0.69 $ | 1000 | RF MOSFET HEMT 50V 440217... |
CGHV50200F | Cree/Wolfspe... | 533.6 $ | 1000 | RF MOSFET HEMT 40V 440217... |
CGHV27100F | Cree/Wolfspe... | 85.5 $ | 1000 | RF MOSFET HEMT 50V 440162... |
CGHV27060MP-TB | Cree/Wolfspe... | 0.0 $ | 1000 | TEST FIXTURE FOR CGHV2706... |
CGHV31500F-TB | Cree/Wolfspe... | 381.15 $ | 10 | TEST FIXTURE FOR CGHV3150... |
CGHV27200-TB | Cree/Wolfspe... | 381.15 $ | 2 | EVAL BOARD FOR CGHV27200 |
CGHV35400F-TB | Cree/Wolfspe... | 381.15 $ | 2 | TEST FIXTURE FOR CGHV3540... |
CGHV14250F-TB | Cree/Wolfspe... | 381.15 $ | 6 | TEST FIXTURE FOR CGHV1425... |
Latest Products
MRF6S21050LR3
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
MRF6S18060NR1
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
MRF1550NT1
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
MRF8S21100HSR3
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
LET16060C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
LET16045C
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...