CGHV27030S Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

CGHV27030S is an RF power transistor designed for use in applications such as mobile phones, wireless transmitter transceivers, satellite transceivers and other radar systems. It is developed by Infineon Technologies, a multi-national semiconductor manufacturer. The CGHV27030S is an RF power field-effect transistor (FET) based on a Silicon-on-Sapphire (SOS) technology. This technology provides superior performance over other technologies, such as Silicon-on-Insulator (SOI), due to its higher breakdown voltage, faster switching speed, and better thermal properties. The CGHV27030S is rated at 270 volts and designed to handle up to 30 watts of RF power in pulsed mode applications. This makes it ideal for applications that require high output power, such as satellite transceivers and radar systems.

The CGHV27030S is constructed using a high voltage vertical HV field-effect transistor (FET) process. This process makes it possible to fabricate high voltage vertical MOSFETs with excellent device performance, such as low ON-resistance and advanced thermal characteristics. This technology has proven to be the most reliable way of producing field-effect transistors for high power, high voltage applications. The device also features a built-in voltage regulation circuit, which helps maintain balanced output power levels and appropriate drain-source voltage.

The CGHV27030S works with a high voltage power supply applied directly to the drain, which creates a depletion mode of operation. When the gate voltage is lower than the drain voltage, no current flows through the transistor. However, when the gate voltage increases and exceeds the threshold voltage, current flows through the transistor. This provides an extremely fast switching capability, allowing the transistor to rapidly switch high power levels.

Additionally, the CGHV27030S is built with special packaging materials and methods that provide superior thermal performance. This allows the transistor to operate at higher temperatures with reduced power dissipation, enabling it to handle more output power.

The CGHV27030S is well-suited for applications that require high output power, such as satellite transceivers and radar systems. Its high breakdown voltage and fast switching speed allow it to handle large amounts of power with minimal power dissipation, making it ideal for these types of applications.

The specific data is subject to PDF, and the above content is for reference