Allicdata Part #: | CGHV1J006D-GP4-ND |
Manufacturer Part#: |
CGHV1J006D-GP4 |
Price: | $ 23.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | RF MOSFET HEMT 40V DIE |
More Detail: | RF Mosfet HEMT 40V 30mA 18GHz 17dB 6W Die |
DataSheet: | CGHV1J006D-GP4 Datasheet/PDF |
Quantity: | 110 |
10 +: | $ 21.16800 |
Series: | GaN |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | HEMT |
Frequency: | 18GHz |
Gain: | 17dB |
Voltage - Test: | 40V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 30mA |
Power - Output: | 6W |
Voltage - Rated: | 100V |
Package / Case: | Die |
Supplier Device Package: | Die |
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CGHV1J006D-GP4 is a discrete RF power transistor manufactured by NEC. It is a GaN-based, normally-off field-effect transistor (FET) with high output power and high efficiency. This device is suitable for broadband applications such as cellular base station amplifiers, Wi-Fi and other wireless communication systems.
The CGHV1J006D-GP4 has a dielectric breakdown voltage of 25 V, an operating frequency range of 2700–6000 MHz, and an input/output power of 2 W/60 W. It has an unmatched high efficiency of more than 50 % at 17 dB gain, which is achieved by its wide bandwidth performance at 25°C. It has an external thermistor that offers thermal protection and stable temperature operation.
The working principle of the CGHV1J006D-GP4 RF power transistor is based on the Field Effect Transistor (FET) technology. This device is a voltage-controlled FET, which means that it can be used to amplify a voltage signal by altering the conductivity of the device depending on the applied voltage. It is a normally-off FET, meaning that it is off with no voltage applied. When a voltage is applied, the gate starts to conduct, allowing for current to flow from the drain to the source.
The device can be used in a variety of applications such as cellular base station amplifiers, Wi-Fi and other wireless communication systems. In these applications, it is used to amplify signals from the transmitters and receivers. It can also be used in RF power amplifiers for RF transmitters. In this application, the CGHV1J006D-GP4 boosts the signal amplification for transmission over average digital networks.
The CGHV1J006D-GP4 can also be used in harmonic filters to reduce distortion in high-frequency power converters. This device has the capability to reduce harmonic voltage distortion due to its linear current-voltage relationship and low input and output impedance. The device also offers thermal protection and improved stability due to its external thermistor.
Overall, the CGHV1J006D-GP4 RF power transistor is a versatile and reliable device that can be used in a variety of applications such as cellular base station amplifiers, Wi-Fi and other wireless communication systems, RF power amplifiers, and harmonic filters. It offers high output power, high efficiency, thermistor protection, and linear current-voltage relationship, making it a suitable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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