CGHV1F025S Discrete Semiconductor Products

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CGHV1F025S application field and working principle

The CGHV1F025S is an RF power MOSFET suitable for most cellular applications. The device offers low R_DS(ON) and fast switching capabilities in a small-footprint part, allowing for excellent performance in a wide range of high-power applications.

Application Field

The CGHV1F025S can be used in a variety of applications, ranging from mobile communication to broadband wireless systems. The device is primarily used in cellular base stations and other RF power amplifiers. It has also been used in cable, satellite, and WiFi systems, as well as other high-power applications such as automotive and defense systems.

Working principle

The CGHV1F025S employs a depletion-mode MOSFET architecture, which is the most commonly used type of FET for RF applications. The device is designed for RF power amplification functions. It is capable of working with frequency range of up to 2.5GHz, with a maximum power of 200W. The device’s operation is based on the effects of an electric field on the conductivity of a semiconductor material, whereby electrons are attracted from the drain and repelled from the source.

The device’s architecture features an input gate, a source-drain region and a substrate layer on which the source and drain are formed. The input gate is the control terminal that is used to control the current flowing through the device. The source and drain regions are used to collect the current flowing through the device, while the substrate is used as a shallow channel to transfer the current.

The CGHV1F025S utilizes an advanced structure that includes a thin film layer of silicon between the gate and the substrate layers. This thin film provides an improved breakdown voltage, low R_DS(ON), and fast switching capabilities. The device is available in a variety of packages, including the widely used SOT-89 and UTFL options.

In addition to the aforementioned features, the CGHV1F025S also offers wide bandwidth coverage with a high gain, thermal radiation and reliable operation. The device is compliant with RoHS standards, making it an attractive option for many high-power applications.

Overall, the CGHV1F025S is an excellent choice for RF power applications. It offers low R_DS(ON), fast switching capabilities and wide bandwidth coverage, as well as being compliant with RoHS standards. The device’s small footprint and easy handling allow for excellent performance in a variety of high-power applications.

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