CGHV50200F Allicdata Electronics
Allicdata Part #:

CGHV50200F-ND

Manufacturer Part#:

CGHV50200F

Price: $ 533.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Cree/Wolfspeed
Short Description: RF MOSFET HEMT 40V 440217
More Detail: RF Mosfet HEMT 40V 1A 5GHz 11.8dB 200W 440217
DataSheet: CGHV50200F datasheetCGHV50200F Datasheet/PDF
Quantity: 1000
1 +: $ 485.08700
Stock 1000Can Ship Immediately
$ 533.6
Specifications
Series: GaN
Packaging: Bulk 
Part Status: Active
Transistor Type: HEMT
Frequency: 5GHz
Gain: 11.8dB
Voltage - Test: 40V
Current Rating: 17A
Noise Figure: --
Current - Test: 1A
Power - Output: 200W
Voltage - Rated: 125V
Package / Case: 440217
Supplier Device Package: 440217
Description

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The CGHV50200F is a high frequency, half-bridge integrated Power MOSFET array which is suitable for commercial and industrial devices. This MOSFET array can operate at up to 28V, and is the ideal choice for a variety of applications that require high performance and low power consumption, including RF amplifiers, RF switches, RF TV and cable applications, and many more.

The primary advantage of this MOSFET array is that it is able to provide extremely high frequency performance in a low power consumption package. The operating frequency range of the CGHV50200F is from 27 to 400MHz, and it is able to produce up to 50W of output power at these frequencies. This allows it to be used in a wide range of power amplifiers, switches, and other high-frequency applications.

The CGHV50200F MOSFET array consists of two separate, independent Power MOSFETs. Each of these MOSFETs is connected to a dedicated power supply and ground, allowing it to operate independently of the other. This allows it to be used as a single device or as part of a multi-device system. Additionally, the CGHV50200F MOSFET array also features an integrated circuit protection device that limits the output power of the device and ensures its safe operation.

The CGHV50200F MOSFET array is designed to provide high frequency, low power operation in a small package. Because of its small size, it is ideal for a variety of applications. It is particularly useful in wireless applications, as it allows for better signal reception and increased range. Additionally, because of its high frequency and low power operation, it is also suitable for low power, cost-sensitive applications.

The working principle of the CGHV50200F MOSFET array is based on the principle of capacitive and resistive connections. Each of the MOSFETs in the array is connected to a dedicated power supply, which is then connected to ground. As current passes through the MOSFET array, the voltage drop across the MOSFETs causes their resistance to increase, effectively allowing them to control the flow of current. In this way, the CGHV50200F MOSFET array is able to regulate and control the current flow in a given circuit, providing both protection and high frequency performance.

The CGHV50200F MOSFET array is an ideal choice for a variety of applications that require high frequency, low power operation. It is especially well-suited for use in RF amplifiers, switches, and other high frequency applications. This MOSFET array provides increased range and signal reception for wireless applications, as well as for cost-sensitive, low power applications. With its integrated protection features and its ability to regulate current flow, the CGHV50200F is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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