CGHV22200F

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CGHV22200F is a silicided Schottky field effect transistor (FET) that is designed for 24 Ghz applications. It is manufactured by Silicon Valley Technology Company and is a Type 2 (GaN) device. This device is made of Gallium-Nitride (GaN) and offers superior electrical characteristics such as higher thermal stability, low noise figure and high efficiency in the 24GHz range.

The CGHV22200F is a mobile, ultra-high frequency field effect transistor (FET). It was designed to meet the needs of the 24 GHz market. The device is particularly suited to linear and pulsed applications. It features low insertion losses with minimal thermal drift. These traits make it ideal for a wide range of applications such as avionics, military and space transmitters, point-to-point radios, automotive mm-wave radar, optical/IR transmitters and aerospace/satellite communications.

The CGHV22200F has a voltage feature of 25 volts, and a power output rating of 200 Watts with a gain of 17 dB (Units dB per Voltage). In short-duration pulse apps, the power output is estimated to be around 500 Watts. It has a relatively low noise figure of 2.5 dB (Units dB per Gate).

The CGHV22200F integrates a Schottky derived field-effect transistor (FET) for enhanced performance. It works on the principle of a field effect transistor, whereby a voltage applied to one or more gate electrodes controls the conductivity of a channel between source and drain terminals. The current flow in the channel can be increased or decreased relative to the applied voltage by controlling the applied gate voltage. This makes Schottky FETs well-suited for applications where high gain and low noise are desired.

The CGHV22200F is specified to operate up to 24 GHz, making it ideal for high-frequency applications with the ability to deliver high power and efficiency. Conclusion, CGHV22200F is a highly stable, low noise, and efficient GaN device that is ideal for applications with a wide variety of radio frequency (RF) needs.

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