CGHV27200F

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Modern societies are facing increasing demands for electricity. To address the challenge of these demands, a variety of devices have been developed to improve electricity efficiency and reduce power consumption. One such device is the high voltage MOSFET (metal-oxide semiconductor field-effect transistor) CGHV27200F, which is specifically designed to meet the needs of modern devices such as smart phones, computers, cameras, and other electronic products. In this article, we will discuss the application field and working principle of the CGHV27200F.

The CGHV27200F high voltage MOSFET is suitable for the highest requirements of modern devices. This device is designed to help reduce on-resistance and power dissipation, providing high performance at an efficient power level. It is also capable of withstanding high voltage saturation and current ratings. In addition, the device is stable in temperature and can operate at over 200 Volt. As a result, it can be used in motor drivers, converters, motor control, and other applications where high voltage, low on-resistance, and low power dissipation are required.

The working principle of the CGHV27200F high voltage MOSFET is based on a process known as "Floating-gate MOSFET (FGMOS)". In FGMOS, a floating-gate is placed between the source and drain electrodes. This floating-gate is charged with a negative charge to create a \'gate-voltage\' and adjust the current flow. The gate-voltage is used to control the threshold voltage, which determines the amount of current that will be passed through the device. When the gate-voltage is increased, the current will increase, and when the gate-voltage is reduced, the current will decrease.

The CGHV27200F high voltage MOSFET is specially designed for use in wide varieties of applications such as motor drives, industrial automation, and many others. It has a low on-resistance of 0.33 ohms, very low capacitance, and a very high breakdown voltage of 200 Volt. It is also able to dissipate a large amount of power without any current limitation. Its common mode rejection and electromagnetic compatibility (EMC) makes it suitable for applications where EMC immunity is required. Additionally, it provides excellent protection by providing constant-temperature protection through its thermal sensing device and short-circuiting protection.

The CGHV27200F high voltage MOSFET is a highly advanced device with many applications and features designed to meet the needs of modern devices. Its powerful performance and design ensure that it is ideally suited for those needing a reliable and efficient solution for their power management needs. Its wide range of features and benefits make it an essential component in any application looking to reduce power consumption and maintain system performance.

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