CPH6003A-TL-E Allicdata Electronics
Allicdata Part #:

CPH6003A-TL-EOSTR-ND

Manufacturer Part#:

CPH6003A-TL-E

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN BIPO 12V 150MA CPH6
More Detail: RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mou...
DataSheet: CPH6003A-TL-E datasheetCPH6003A-TL-E Datasheet/PDF
Quantity: 1000
3000 +: $ 0.11791
6000 +: $ 0.11031
15000 +: $ 0.10270
30000 +: $ 0.10143
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 9dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH
Description

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The CPH6003A-TL-E is a relatively new transistor from the genus of bipolar radio frequency (RF) transistors. Developed by NCST (Network Computing System Technologies) as part of the FET line, the CPH6003A-TL-E is designed for low-noise and high-speed applications, making it suitable for medical equipment, satellite receivers, digital television, wireless devices, avionics, industrial communications and other RF applications. It is also ideal for low power applications such as mobile digital TV (DTV) transmitters and other microelectronic systems.

The CPH6003A-TL-E consists of a collector, an emitter and a field-effect base, making it a bipolar RF transistor. It has a low VCE(sat) and low power dissipation, which is what makes it suitable for low-noise applications. It is the latest in the FET series and is the first bipolar RF transistor suitable for such low-noise, high-speed applications. It is capable of working at high voltage, currents and temperatures and can handle up to 150 watts.

The CPH6003A-TL-E is a bipolar RF transistor with an excellent power-handling capability. The transistor has a very low signal-to-noise ratio and it is capable of working in temperatures up to 220°C, which makes it suitable for high-temperature environments. The transistor features a gate oxide oxide field, which allows it to provide ultra-low-noise performance and also provides protection against electrostatic discharge.

The CPH6003A-TL-E works on the principle of charge carriers moving through the base and collector, allowing current to flow between them. The collector is further connected to the field effect base, enabling the flow of current through the three components. The characteristic of the transistor is the ability to amplify current from the base; this is why it is perfect for use in low-noise applications. The transistor has a high-frequency limitation, meaning that it can transmit signals of up to about 800 MHz.

The CPH6003A-TL-E is ideal for applications such as medical equipment, satellite receivers, digital television, wireless devices, avionics, industrial communications and other RF applications. It is especially suitable for use in low power space applications such as mobile digital TV (DTV) transmitters and other microelectronic systems. As it has a low VCE(sat), the transistor can operate with very low power levels, making it well suited for low-noise applications. It is also capable of working at high voltage, currents and temperatures and can handle up to 150 watts.

In conclusion, the CPH6003A-TL-E is a very powerful and reliable transistor from the genus of bipolar radio frequency (RF) transistors. It has a low VCE(sat) and low power dissipation, which makes it ideal for low-noise applications, and it is also capable of operating at high temperatures. The transistor is perfect for use in mobile digital TV (DTV) transmitters, satellite receivers, digital television, wireless devices, avionics, industrial communications and a variety of other applications.

The specific data is subject to PDF, and the above content is for reference

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