CPH6350-TL-EX

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The CPH6350 TL-EX is a high-performance, low-power N-Channel depletion-mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that is through-hole mounted (THM) and is used in a variety of applications. It has an ultra-low on-state drain-source resistance Rs, high breakdown voltage VBR, and low gate-threshold voltage, making it ideal for use in high-frequency applications such as motor control and audio systems.The CPH6350 TL-EX MOSFET is an excellent choice for use in high-powered and high-frequency signal conditioning applications, active filter circuits, and power switching circuits. The CPH6350 TL-EX MOSFET offers an on-state drain-source resistance Rds(on) of only 0.2Ω at Vgs of 5V, enabling it to support higher frequency switching than other MOSFETs and handle higher loads. The CPH6350 also offers a breakdown voltage VBR of 30V, allowing it to support large voltage drops and high-power applications.The working principle of the CPH6350 TL-EX MOSFET is quite simple. It is constructed of two pieces of silicon sandwiched together: the source and the drain. When an electric field is introduced into the silicon, it creates an inversion layer along the sides of the source and the drain. This inversion layer allows a current to flow from the source to the drain. This current is controlled by the applied voltage at the gate of the MOSFET, which is known as the gate voltage Vgs. When Vgs is above the threshold voltage (Vt), the current will increase. When Vgs is below Vt, the current will decrease. This is what gives MOSFETs their characteristic of allowing current to be controlled by the gate voltage.The CPH6350 TL-EX MOSFET is a great choice for high-powered applications. It offers low Rds(on) and high VBR that allows it to support large voltage drops and high-power applications. In addition, its compact form factor and ultra-low on-state drain-source resistance makes it an ideal choice for use in high-frequency applications such as motor control and audio systems. Furthermore, its simple two silicon-sandwiched structure and gate voltage control make it easy to use and reliable. All of these features make the CPH6350 TL-EX MOSFET an excellent choice for high-powered and high-frequency signal conditioning applications.

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