CPH6350-TL-W Allicdata Electronics
Allicdata Part #:

CPH6350-TL-WOSTR-ND

Manufacturer Part#:

CPH6350-TL-W

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 6A CPH6
More Detail: P-Channel 30V 6A (Ta) 1.6W (Ta) Surface Mount 6-CP...
DataSheet: CPH6350-TL-W datasheetCPH6350-TL-W Datasheet/PDF
Quantity: 9000
Stock 9000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CPH6350-TL-W is a single N-Channel Enhancement-mode Field-Effect Transistor (FET), which has high input impedance, low threshold voltage, and high frequency capabilities; making it suitable to use in many applications, such as amplifiers, analog switches, and VCOs.

This FET is mainly used in discrete circuits, analog switches, amplifiers, voltage-controlled oscillators (VCOs), and other switching circuits. It is also suitable for pulse transistors, and as a low-level gate in modern integrated CMOS circuits. Furthermore, the CPH6350-TL-W is widely used as a negative voltage detector and a high-speed switch. This device is built on a 5 nm CMOS process technology and features an N-channel design. The device is also compatible with the TSSOP-8 package.

The CPH6350-TL-W is an N-Channel MOSFET with a low Gate-Source Threshold Voltage of 0.8V. This feature allows the MOSFET to function as an efficient switch in low-voltage systems. The device also offers a low on-state resistance which allows for high switching efficiency and helps to reduce power dissipation. In addition, the CPH6350-TL-W offers a high-speed switching time, which is beneficial for time-sensitive applications. The maximum Drain-Source Voltage is rated at 12 Volts while the maximum Drain-Source Current is rated at 70 Amps.

The working principle of the CPH6350-TL-W involves the Gate-Source Voltage (VGS). When a voltage is applied to the Gate-Source terminal, electrons are gathered in the N-Channel and the Drain-Source Current (IDS) will increase. The MOSFET is said to be in off-state when the voltage is below the threshold voltage, VGS(th), which is 0.8V for the CPH6350-TL-W. When the Gate-Source Voltage is higher than the threshold voltage, the MOSFET is said to be in on-state and the current will increase.

In order to achieve a certain voltage level, an N-Channel transistor is placed in the circuit and controlled by a MOSFET. A rising edge Gate-Source Voltage will cause the transistor to turn on and allow current to flow through the circuit. When the voltage falls below the voltage threshold, the transistor will turn off and no current will flow.

The CPH6350-TL-W is used in a variety of applications, such as analog switch circuits, voltage-controlled oscillators, amplifiers and other digital circuits. Its ability to function as an effective switch with a low Gate-Source Voltage threshold and low on-state resistance make it suitable for high-speed switching applications. Moreover, its low voltage and high current ratings make it suitable for high-voltage and high current applications.

In conclusion, the CPH6350-TL-W is a single N-Channel Enhancement-mode Field-Effect Transistor (FET) suitable for many applications. It is mainly used in discrete circuits, analog switches, amplifiers, voltage-controlled oscillators (VCO), and other switching circuits. The device is built on a 5 nm CMOS process technology and features an N-channel design. It has a low Gate-Source Threshold Voltage and a low on-state resistance, which makes it suitable for high-speed switching applications. Additionally, the low voltage and high current ratings make it suitable for high-voltage, high current applications.

The specific data is subject to PDF, and the above content is for reference

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