CPH6153-TL-E Allicdata Electronics
Allicdata Part #:

CPH6153-TL-E-ND

Manufacturer Part#:

CPH6153-TL-E

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 20V 3A CPH6
More Detail: Bipolar (BJT) Transistor PNP 20V 3A 500MHz 1.3W Su...
DataSheet: CPH6153-TL-E datasheetCPH6153-TL-E Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07029
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 195mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1.3W
Frequency - Transition: 500MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH
Description

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  • Introduction:

CPH6153-TL-E is a single bipolar junction transistor (BJT) specifically designed for use in high-frequency RF applications. This versatile device can be used to drive medium power loads and has an excellent signal transmission performance. As a result, it is widely used in a variety of electronic circuits, particularly in microwave radios, amplifier circuits, and switching circuits. In the following sections, more details will be provided about the application fields and working principle of CPH6153-TL-E.

  • Application Field:

The CPH6153-TL-E is versatile and can be used in a variety of applications due to its high performance. It can cope with medium power loads and has excellent signal transmission for RF applications when used with an appropriate circuit. Furthermore, its wide band capabilities mean that it is ideal for microwave radios and other high-frequency systems. This transistor is particularly suited to amplifier circuits, such as audio amplifiers, as it has very good electrical and thermal properties and can operate up to 12 GHz.

CPH6153-TL-E is also well suited to switching circuits that require high frequency signals, such as relay switching and digital logic. It has excellent isolation characteristics and can be used to switch large current loads on and off. In addition, it can provide good protection against overvoltage and current surge, making it suitable for use in a variety of radios and electronic circuits.

  • Working Principle:

A simple explanation of the working principle of CPH6153-TL-E is that it is a three-terminal device, consisting of an emitter, base and collector. When a voltage is applied to the base, it causes current to flow from the emitter to the collector. This current flow allows the transistor to act as an amplifier or a switch, depending on the bias voltage of the circuit. In particular, applying a positive voltage to the base will result in a larger current flow from the emitter to the collector. Conversely, applying a negative voltage will cause the current to decrease. As a result, the amount of current flow can be adjusted to suit the requirements of the application.

The CPH6153-TL-E operates over a range of Wide Band frequency applications, so it can be used in high-frequency applications where large amounts of power are required. As the transistor operates over frequencies up to 12 GHz, it is suitable for use in microwave radios, digital switching and audio amplifier circuits. Furthermore, its excellent isolation characteristics, good dynamic performance and reliable operation make it suitable for use in a variety of sensitive electronics.

  • Conclusion:

In conclusion, the CPH6153-TL-E is a single bipolar junction transistor (BJT) specifically designed for use in high-frequency RF applications. It can cope with medium power loads and has excellent signal transmission performance. As a result, it is widely used in a variety of electronic circuits, particularly in microwave radios, amplifier circuits, and switching circuits. It operates over a range of Wide Band frequency applications and is suitable for use in high-frequency applications where large amounts of power are required.

The specific data is subject to PDF, and the above content is for reference

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