CPH6020-TL-E

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The CPH6020-TL-E is a low-noise PNP bipolar transistor from Central Semiconductor Corporation. It is designed specifically for radio frequency applications, as evidenced by its low intrinsic capacitance and a wide range of electrical characteristics.

This transistor is a higher current version of the standard CPH6020-TL-A. The TL-E is a 12V, NPN, 8GHz, 10mA low noise PNP bipolar transistor.

The CPH6020-TL-E is made remarkably small, measuring only 1mm by 0.6mm – half the size of a standard transistor. In addition, with a maximum junction temperature of 175°C, the CPH6020-TL-E makes its efficient operation possible.

Aside from its size and temperature limitations, the CPH6020-TL-E also has an impressive range of electrical characteristics. These characteristics include a Collector-Emitter Breakdown Voltage of 30V, a Collector-Emitter Saturation Voltage of 1V, and an Output Admittance of 7Ohms. Its maximum collector capacitance ranges from 0.2pF to 1pF, and its maximum base capacitance ranges from 10pF to 20pF.

The CPH6020-TL-E is designed for radio frequency applications, and its low intrinsic capacitance and wide range of electrical characteristics make it highly suitable for those applications. Its high current gain – rated at (hFE) of 90 – and low input capacitance of 3.2pF means that the transistor’s operations are fast and efficient. The CPH6020-TL-E also has an impressive 30uA input base current with a guaranteed low-noise figure of 15uV, making it one of the most efficient transistors on the market.

The CPH6020-TL-E is an excellent choice for use in a variety of applications. These include narrow band amplifiers, mobile radio, and video and audio amplifiers. In addition, it can also be used in portable applications, such as in the design of mobile phones and notebooks. With its small size and high output, the CPH6020-TL-E can be used in applications that require a low-noise, high-efficiency transistor.

The transistor’s working principle is based on its inherent properties – such as field effect, negative feedback, and base-width modulation. As the voltage applied to the base of the transistor increases, the gap between the collector and the base (or source) of the transistor decreases. This gap is known as the depletion region and it is where the majority of the transistor’s current is conducted. As the voltage applied to the base of the transistor increases, the current in the base-collector junction also increases, leading to a cascading effect. The precise magnitude of the current is proportional to the ratio between the width of the base and the width of the emitter. The width of the emitter, in turn, is proportional to the applied voltage.

In summary, the CPH6020-TL-E is a radio frequency transistor designed for high-efficiency operation. Its small size and high-current gain make it an ideal choice for a wide variety of applications. Its low-noise figure helps to ensure that it is well-suited for portable and mobile devices, in addition to other radio frequency applications. Its working principle is based on its inherent properties of field effect, negative feedback, and base-width modulation.

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