Allicdata Part #: | CPH6442-TL-EOSTR-ND |
Manufacturer Part#: |
CPH6442-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 6A CPH6 |
More Detail: | N-Channel 60V 6A (Ta) 1.6W (Ta) Surface Mount 6-CP... |
DataSheet: | CPH6442-TL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-CPH |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1040pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CPH6442-TL-E is a N-Channel MOSFET that was developed for the purpose of providing low capacitance protection for high speed signals. This device is capable of working over temperature ranges from -55 to 125 °C, which is well-suited for most applications. It has a drain-source voltage (VDS) of -10V, a maximum drain current (ID) of 3.2 A, and a maximum power dissipation of 5.5 W. The CPH6442-TL-E is ideal for high-speed signal line protection in consumer electronics, automotive and portable consumer applications.
Application Field of CPH6442-TL-E:
The CPH6442-TL-E is suitable for a variety of applications, as it is capable of handling up to 3.2 A of drain current. It has a maximum power dissipation of 5.5 W, and it is suitable for temperature ranges from -55 to 125 °C, making it ideal for use in consumer electronics, automotive and portable consumer applications. It is also suitable for low capacitance protection for high speed signals and is particularly recommended for the protection of high speed signal lines.
Working Principle of CPH6442-TL-E:
The working principle of the CPH6442-TL-E is based on an advanced N-channel enhancement-mode field effect transistor (MOSFET). When an input voltage is applied to the gate of this device, a conducting channel is formed between the source and drain. This conducting channel offers very low total gate charge and very low RDS(ON) values. It also provides excellent switching performance, which can be used in a wide variety of circuit applications. Furthermore, the CPH6442-TL-E is capable of very fast switching times, due to its low capacitance gate-source structure.
Features of CPH6442-TL-E:
- Low power dissipation.
- Low gate charge.
- High speed switching.
- Low on resistance (RDS(ON)).
- Wide operating temperature range.
- High power density.
- Low capacitance gate-source structure.
- Excellent reverse bias stability.
Conclusion:
The CPH6442-TL-E is an N-channel MOSFET that is suitable for use in consumer electronics, automotive and portable consumer applications. It is designed specifically to provide low capacitance protection for high speed signals, while offering excellent switching performance and a wide operating temperature range. Its low gate charge and low RDS(ON) values, combined with its fast switching times, make it ideal for high speed signal line protection in a variety of circuit applications.
The specific data is subject to PDF, and the above content is for reference
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