CPH6347-TL-W Allicdata Electronics

CPH6347-TL-W Discrete Semiconductor Products

Allicdata Part #:

CPH6347-TL-WOSTR-ND

Manufacturer Part#:

CPH6347-TL-W

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 6A CPH6
More Detail: P-Channel 20V 6A (Ta) 1.6W (Ta) Surface Mount 6-CP...
DataSheet: CPH6347-TL-W datasheetCPH6347-TL-W Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 39 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The CPH6347-TL-W is a single polarity p-channel enhancement mode field-effect transistor (FET) designed for use in low voltage, low current applications. The device is based upon the N-channel MOSFET process, and utilizes a p-channel enhancement mode FET to provide greatly improved power handling characteristics compared to an N-channel FET. The device is capable of providing switching and linear applications, and is ideal for use in low-voltage power supplies, battery chargers, and other low-voltage circuits.

The CPH6347-TL-W has a voltage breakdown of 400 V and a current rating of 2 A, making it suitable for a wide range of applications. It has a Gate-Source voltage range of -3 V to 20 V and a Gate-Drain voltage range of -3 V to 25 V. The device has a low drain-source on-resistance of just 1 ohms, and has a high frequency performance with a wide frequency range of 0.1-2 MHz. The device is also designed to provide low steady-state power losses with low EMI/EMC noise and fast switching times.

In terms of the device\'s operating principle, the CPH6347-TL-W works by allowing a current to flow between the Gate and Source, creating a depletion region near the Gate-Source junction. This depletion region is a region in which no electrons can flow, providing an insulation barrier between the Gate and Source, allowing the Gate-Source voltage to control the current in the channel. This allows the CPH6347-TL-W to be used as either a switching device or as a linear device. As a switching device, it can be used in power converter circuits, such as for controlling the power supply of microprocessors. As a linear device, it can be used in signal amplifiers, voltage regulators, current driver amplifiers, and a wide range of other linear applications.

Due to its wide range of applications, high frequency performance, and low power dissipation characteristics, the CPH6347-TL-W is an ideal choice for low voltage, low current applications. It is capable of providing reliable performance in a wide range of temperatures, from -40°C to 130°C, ensuring reliable performance in a wide variety of environments. The device is also easy to use and requires minimal external components, allowing it to be used in cost and space-sensitive designs. The CPH6347-TL-W is the perfect solution for low voltage, low current applications.

The specific data is subject to PDF, and the above content is for reference

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