CPH6347-TL-W Discrete Semiconductor Products |
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Allicdata Part #: | CPH6347-TL-WOSTR-ND |
Manufacturer Part#: |
CPH6347-TL-W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 6A CPH6 |
More Detail: | P-Channel 20V 6A (Ta) 1.6W (Ta) Surface Mount 6-CP... |
DataSheet: | CPH6347-TL-W Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 1.4V @ 1mA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-CPH |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 39 mOhm @ 3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The CPH6347-TL-W is a single polarity p-channel enhancement mode field-effect transistor (FET) designed for use in low voltage, low current applications. The device is based upon the N-channel MOSFET process, and utilizes a p-channel enhancement mode FET to provide greatly improved power handling characteristics compared to an N-channel FET. The device is capable of providing switching and linear applications, and is ideal for use in low-voltage power supplies, battery chargers, and other low-voltage circuits.
The CPH6347-TL-W has a voltage breakdown of 400 V and a current rating of 2 A, making it suitable for a wide range of applications. It has a Gate-Source voltage range of -3 V to 20 V and a Gate-Drain voltage range of -3 V to 25 V. The device has a low drain-source on-resistance of just 1 ohms, and has a high frequency performance with a wide frequency range of 0.1-2 MHz. The device is also designed to provide low steady-state power losses with low EMI/EMC noise and fast switching times.
In terms of the device\'s operating principle, the CPH6347-TL-W works by allowing a current to flow between the Gate and Source, creating a depletion region near the Gate-Source junction. This depletion region is a region in which no electrons can flow, providing an insulation barrier between the Gate and Source, allowing the Gate-Source voltage to control the current in the channel. This allows the CPH6347-TL-W to be used as either a switching device or as a linear device. As a switching device, it can be used in power converter circuits, such as for controlling the power supply of microprocessors. As a linear device, it can be used in signal amplifiers, voltage regulators, current driver amplifiers, and a wide range of other linear applications.
Due to its wide range of applications, high frequency performance, and low power dissipation characteristics, the CPH6347-TL-W is an ideal choice for low voltage, low current applications. It is capable of providing reliable performance in a wide range of temperatures, from -40°C to 130°C, ensuring reliable performance in a wide variety of environments. The device is also easy to use and requires minimal external components, allowing it to be used in cost and space-sensitive designs. The CPH6347-TL-W is the perfect solution for low voltage, low current applications.
The specific data is subject to PDF, and the above content is for reference
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