Allicdata Part #: | CPH6531-TL-EOSTR-ND |
Manufacturer Part#: |
CPH6531-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2PNP 50V 1A CPH6 |
More Detail: | Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 1A... |
DataSheet: | CPH6531-TL-E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | 2 PNP (Dual) |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 380mV @ 10mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 2V |
Power - Max: | 1.1W |
Frequency - Transition: | 420MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-CPH |
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The CPH6531-TL-E is a bipolar Junction Transistor (BJT) Array that is designed primarily for the purpose of amplification. This component consists of two Darlington Transistors connected in series, providing high current gain and excellent thermal stability. CPH6531-TL-E can be used in a wide range of applications such as motor control, high-voltage switching and sensing, and in power control applications. This device is specifically designed to handle higher power levels while maintaining a low profile, making it an ideal choice for high-density applications.
The CPH6531-TL-E is a NPN transistor array that has two transistors connected in series. The two transistors form a Darlington Array, which provides high current gain and excellent thermal stability. This device has a collector-base breakdown voltage of 80 Volts and a collector-emitter breakdown voltage of 45 Volts. The current gain of this device is determined by the hFE, which is the avalanche gain divided by the saturation gain, and can range from 200 to 500. This component also has a low thermal resistance, which is important for control applications.
The working principle of the CPH6531-TL-E is straightforward. The two Darlington transistors form a two stage amplifier, with the first transistor acting as an input stage and the second acting as the output stage. In the input stage, a small current is drawn in the base of the first transistor. This in turn causes a larger current to flow from the collector to the emitter of the first transistor. This current is amplified by the second transistor, which causes a larger current to flow from the collector to the emitter of the second transistor. This current is then fed back to the base of the first transistor and the process continues in a self-sustaining loop, amplifying the input.
The CPH6531-TL-E can be used in a wide range of applications due to its high current gain and low thermal resistance. It is a practical and reliable solution for applications such as motor control, high-voltage switching, sensing, and power control. This component is suitable for high-density environments because of its low profile and high current amplification capabilities. Furthermore, this device can be used in a wide range of temperature and operating conditions, making it versatile and reliable.
In conclusion, the CPH6531-TL-E is a bipolar junction transistor (BJT) array that is designed primarily for the purpose of amplification. It consists of two Darlington transistors connected in series and provides high current gain and excellent thermal stability. This device is suitable for applications such as motor control, high-voltage switching and sensing, and power control due to its low thermal resistance and high current gain. Furthermore, this device is suitable for high-density environments and can be used in a wide range of temperature and operating conditions.
The specific data is subject to PDF, and the above content is for reference
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