CPH6350-TL-E

Vgs(th) (Max) @ Id:	--
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	6-CPH
Mounting Type:	Surface Mount
Power Dissipation (Max):	1.6W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	600pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	43 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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CPH6350-TL-E Application Field and Working Principle

The CPH6350-TL-E is a type of advanced Field-Effect Transistor (FET). It is widely used in electro-magnetic interference (EMI) systems, as well as commercial grade, industrial grade and military grade electronic devices and systems. This FET consists of three electrodes: source, gate and drain. The CPH6350-TL-E is a P-channel MOSFET, which means it is an enhancement type of FET, meaning that it turns on when a positive voltage is applied to the gate. This FET is designed to provide excellent current handling capacity, excellent power dissipation, and low on-resistance, which makes it ideal for a wide variety of applications. The CPH6350-TL-E is a single-packaged FET, meaning that it is packaged in one single TO-220 package. This makes it much easier to handle and mount, as well as making it smaller and lighter than many other FETs. Furthermore, the packaging of this FET is entirely plastic, meaning that it eliminates the need for soldering or electrical connections.The CPH6350-TL-E is an excellent choice for high-frequency switching applications such as low-noise, high-efficiency switching through impulse arc suppression, as well as for high-power-switching applications that involve high voltages with fast switching times. Additionally, it is commonly used in battery-powered systems, as it can help to reduce power consumption and increase efficiency.The CPH6350-TL-E is manufactured with a silicon-on-insulator (SOI) technology, which provides a very low leakage current, ensuring that the device remains stable and reliable even when operating at high temperatures. Furthermore, the SOI technology ensures that the threshold voltage of the FET remains low, meaning that it is suitable for low-voltage applications.The working principle of the CPH6350-TL-E is based on the fact that when a positive voltage is applied to the gate, the gate creates an electric field that attracts electrons from the conducting channel, between the source and the drain. This creates a current flow between the source and the drain, which forms the basis of the FET’s operation. When the gate voltage is lowered, the electrons are repelled, reducing the current flow and switching the device off.In short, the CPH6350-TL-E is an excellent choice of FET for a variety of applications, due to its excellent current handling capacity, low on-resistance, and high power dissipation. Additionally, its single-packaged form makes it convenient to handle and mount, and its SOI technology ensures low leakage current and a low threshold voltage, making it suitable for low-voltage applications.

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