Allicdata Part #: | CPH6443-TL-H-ND |
Manufacturer Part#: |
CPH6443-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 35V 6A CPH6 |
More Detail: | N-Channel 35V 6A (Ta) 1.6W (Ta) Surface Mount 6-CP... |
DataSheet: | CPH6443-TL-H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 35V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 37 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 470pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-CPH |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
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The CPH6443-TL-H is a MOSFET type N-channel enhancement mode Field-Effect Transistor (FET), suitable for applications where high efficiency switching is required. It is capable of operating over a wide range of voltages, from 12V up to 28V, and has a maximum on-state resistance of 8.3 Ohms. With its high-speed operation, it is ideal for applications requiring fast switching such as DC/DC converters, motor drivers and robotics.
MOSFETs are semiconductor devices which can be used to control current. They are composed of two distinct regions: one is made up of doped silicon (n-type or p-type) and the other is a thin dielectric which is responsible for controlling the flow of current. When a voltage is applied to the gate electrode, a field is generated which triodes the current flow across the device. The MOSFET is able to switch a large amount of current rapidly than a traditional BJT type transistor, and it has a much lower power consumption. The CPH6443-TL-H provides an ideal solution for applications that require high-efficiency switching.
The working principle of a MOSFET is based on the application of an electric field to a semiconductor material. This electric field can be used to control the flow of current as electrons are able to move freely in the semiconductor material. When a voltage is applied to the gate electrode, a field is generated which will triode the current between the drain and the source. The greater the voltage applied to the gate electrode, the greater the allowed current and the lower the on-state resistance. The CPH6443-TL-H has a maximum on-state resistance of 8.3 Ohms and is able to operate over a wide range of voltages, from 12V up to 28V.
The CPH6443-TL-H is ideal for applications requiring fast switching such as DC/DC converters, motor drivers and robotics, since it has very high-speed operation. It is also generally used in power electronics applications such as lighting, power switches and automotive electronics. In order to protect the MOSFET from damage, it is important to consider the power rating of the component, as well as its maximum allowable voltage. In the case of the CPH6443-TL-H, the component has a power rating of 270W, and a maximum allowable voltage of 28V.
In summary, the CPH6443-TL-H is an N-channel enhancement mode FET and is ideal for applications requiring high efficiency behaviour. It has a wide range of operating voltages and is suitable for applications such as DC/DC converters, motor drivers and robotics. It is important to consider the power rating of the component and its maximum allowable voltage in order to ensure it is adequately protected.
The specific data is subject to PDF, and the above content is for reference
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