Allicdata Part #: | CPH6122-TL-EOSTR-ND |
Manufacturer Part#: |
CPH6122-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 30V 3A CPH6 |
More Detail: | Bipolar (BJT) Transistor PNP 30V 3A 400MHz 1.3W Su... |
DataSheet: | CPH6122-TL-E Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 180mV @ 75mA, 1.5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
Power - Max: | 1.3W |
Frequency - Transition: | 400MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | 6-CPH |
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The CPH6122-TL-E is a silicon epitaxial-base NPN transistor with a high current-gain and low saturation-voltage. It is commonly used for applications such as high-frequency switch and amplifier, linear amplifier and class-A audio amplifiers, and high-speed motor switches.
This type of transistor is classified as a bipolar junction transistor (BJT) single, meaning that it offers single-voltage capability for voltage control for applications such as high-current switch and amplifier. This type of transistor follows the basic BJT structure, which consists of a base, emitter, and collector.
In this particular case, it uses a silicon epitaxial base to improve its current-gain performance, which is important in applications where fast switching is needed. Additionally, its high current-gain allows it to be used in more power applications than those with silicon based transistors.
In order to work properly, the CPH6122-TL-E needs a small base current to switch on and off. This is accomplished via a biasing process, which introduces a voltage difference between the base and the emitter or collector. The base current is then sufficient to switch the transistor on and off.
The biasing process of the CPH6122-TL-E also helps to reduce its saturation voltage, which is important in applications where high current is needed. When the transistor is switched off, no current is passed through it, thus reducing the power wastage. This is also why a BJT single transistor works better than a regular BJT, as the saturation voltage is much lower.
Another important feature of the CPH6122-TL-E is its wide frequency operating range, which covers up to 4 GHz frequency. This makes this type of transistor well suited for applications where high-frequency switching and amplification is needed. This also ensures that power consumption is kept to a minimum, as the switching can be done with minimal power loss.
In conclusion, the CPH6122-TL-E is a versatile transistor that offers single-voltage capability, high current-gain, low saturation-voltage, and wide frequency operating range for a variety of applications. It offers efficient operation, low power consumption, and excellent performance for switching and amplification requirements.
The specific data is subject to PDF, and the above content is for reference
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