DCX143ZU-7-F Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	250MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SOT-363

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DCX143ZU-7-F Arrays, Pre-Biased Application field and Working Principle

The DCX143ZU-7-F is a pre-biased array designed to meet the needs of many circuit requirements. It consists of a single polarization transistor, an internal base-emitter resistor, and a high-value collector load resistor. DCX143ZU-7-F is a pre-biased high power array that has a wide dynamic range of current gain and enables its use in a wide range of applications.This device is typically used for high power switching, switching power supplies, and power amplification applications. It is capable of providing a high current gain and high voltage response, allowing the arrray to drive high-powered circuits. The DCX143ZU-7-F is also capable of providing protection against over-voltage and over-current conditions.The DCX143ZU-7-F is based on a bipolar junction transistor (BJT) configuration. The transistor is a three-layer, vertical planar structure, consisting of a source region, an emitter-base junction, and a collector-base junction. The emitter-base junction is the main current conducting element of a BJT and is responsible for the current gain of the device. The collector-base junction is responsible for the voltage gain and the input resistance of a BJT.The DCX143ZU-7-F is designed with a pre-biased model, which allows the array to have a high current gain and a low quiescent current for improved efficiency. The pre-biased model is more efficient than a normal BJT in terms of power dissipation because it does not require the same amount of power to be supplied to the BJT in order to achieve the desired current gain. The array also features a low collector-emitter saturation voltage which reduces the impact of reverse recovery time under pulsed loads.The DCX143ZU-7-F contains an internal unique protection system which consists of temperature and over voltage protection. The thermal protection system is designed to protect the transistor from over-temperature conditions. The over-voltage protection system prevents transient over-voltage conditions that could damage the transistor or cause excessive current conduction.In order to use the DCX143ZU-7-F, a proper bias level must be supplied to the device. This is done by connecting a voltage source to the collector and a load to the emitter. The voltage source will provide the base-emitter voltage and the load will provide a load resistance to the emitter. The load resistance will determine the current gain of the device.The DCX143ZU-7-F has a wide range of application fields and has many advantages over conventional BJTs. It is appropriate for high current switching and power amplification applications, and for applications requiring high voltage response and low quiescent current. The device also provides protection from over-voltage and over-current conditions and has a low collector-emitter saturation voltage. With its unique thermal and over-voltage protection systems, the DCX143ZU-7-F is an ideal device for applications requiring performance, reliability, and protection from over-voltage and over-current conditions.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description