DDA114EH-7 Allicdata Electronics
Allicdata Part #:

DDA114EH-7DITR-ND

Manufacturer Part#:

DDA114EH-7

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2PNP PREBIAS 0.15W SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: DDA114EH-7 datasheetDDA114EH-7 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.09605
6000 +: $ 0.09023
15000 +: $ 0.08441
30000 +: $ 0.07742
Stock 3000Can Ship Immediately
$ 0.11
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: DDA114
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): --
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Bipolar transistors are often used as a type of electrical switch or amplifier in embedded or consumer electronics systems. The DDA114EH-7 is an array of four pre-biased bipolar junction transistors (BJTs) manufactured by Panasonic and Panasonic Semiconductor Solutions. This particular BJT array is specially designed for applications such as operational amplifiers, voltage regulators, power MOSFETs, and power transistors.

The DDA114EH-7 consists of three transistors with a common emitter and a fourth transistor with a common collector configuration for greater versatility. Each transistor in the DDA114EH-7 is pre-biased to enable faster power switching and allow for lower on-resistance compared to traditional transistors. The pre-biasing ensures that the device has a predetermined threshold voltage and does not require an external bias with a more gradual switching slope for improved regulation.

The DDA114EH-7 has a maximum voltage rating of 40 V and can operate over a temperature range from -55°C to +125°C. It is able to handle peak currents up to 4 A and has a maximum power dissipation of 1.8 W. The device features built-in protection against over-voltage, over-temperature, and electrostatic discharge (ESD). The device also has a built-in thermal shutdown circuit to protect it from over-current.

The operating principle of the DDA114EH-7 is based on the base-collector junction of a BJT, which is considered to be a two-terminal device. The opposing negative and positive charge carriers, known as holes and electrons, form an electric current when the base-collector junction conducts. This current is proportional to the base current, which is supplied by an external source. As the current passes through the collector-base junction, it gets amplified and can be used to control a load. The DDA114EH-7 is capable of switching at extremely high frequencies and can be used as an amplifier or switch in many different applications.

The DDA114EH-7 array is used in a wide range of applications, such as in operational amplifiers, voltage regulators, power transistors, and power MOSFETs. It is also ideal for applications that require switching at high frequencies, such as in the communications, automotive, and industrial sectors. The pre-biasing feature of the device makes it ideal for regulating voltages and amplifying signals, which is why it is widely found in automotive and industrial applications.

The DDA114EH-7 array is a great choice for applications that require high frequency switching and regulation. With its pre-biasing feature and built-in protection mechanisms, it is a reliable and efficient solution for a wide array of applications. It is also a cost effective solution for applications that require high frequency switching or amplification.

The specific data is subject to PDF, and the above content is for reference

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