DDA144EH-7

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The DDA144EH-7 is an NPN array, pre-biased and 4-transistor (Bjt) device designed for use in applications where increased power is required and fast response times are needed. This device offers the highest possible switching speeds, with the addition of a pre-biased base-emitter configuration design that helps to reduce turn-on time, enhancing speed. The device also contains integrated zener diodes, which help to protect the device from overcurrent.

The device is made up of four NPN transistors – two on the top and two on the bottom. The bottom two, when viewed from the top, are placed side by side, while the top two transistors, when viewed from the top, are vertically arranged. Each of the transistors is rated for a maximum of 500 mA of peak collector current and a maximum of 50 V of collector-emitter voltage. The package size is a tiny SOIC-7, which has a width of 1.25 mm and a length of 2.45 mm.

The DDA144EH-7 is specifically designed for use in video applications, display applications, and various power control and high-speed switching applications. It is suitable for hot swapping applications, as it incorporates an active pull-up network which increases immunity to voltage spikes and power surges. The increased isolation between the high-side switching transistors and the low-side switching transistor helps to reduce circuit complexity, improve switchover capability, and minimize system design complexity.

The device is designed to be used in parallel with a complementary PNP device, such as a PHA883EH, to provide logic level control of the high and low side, as well as to provide source current limiting and overload protection. It is also capable of switching currents up to 4 A, allowing it to be used to control large motors and other electrical equipment, and switching frequencies up to 40 kHz.

The DDA144EH-7 works by utilizing the Darlington configuration, which helps to achieve high breakdown voltage, fast switching speed and excellent linearity. In essence, it consists of two transistors connected in a cascaded arrangement. In this configuration, the first transistor acts as a switch to supply current to the base of the next transistor. This allows the device to achieve increased power and allow for fast switching speeds. In addition, the Darlington configuration provides increased input impedance and a larger current gain.

The device is designed to operate over an extended temperature range (−40 to +150 °C). It is also RoHS compliant and conforms to CAN-SPICE, CAN-FI-LITE and CAN-FI-FAT specifications.

In conclusion, the DDA144EH-7 is an excellent choice for applications where high power and fast response times are needed. It is designed to provide increased immunity to voltage spikes, hot switching capability, improved isolation between high and low-side transistors, and improved switch-off capability. Using the Darlington configuration, it provides increased current gain, increased input impedance and fast switching speeds, making it the ideal choice for video, display and power control applications.

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