Allicdata Part #: | DDA143TH-7DITR-ND |
Manufacturer Part#: |
DDA143TH-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS DUAL PNP SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | DDA143TH-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDA143 |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 2.5mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DDA143TH-7 is a Pre-Biased Bipolar Junction Transistor (BJT) array device designed for applications requiring low-power consumption and signal amplification. The DDA143TH-7 consists of two NPN transistors and two PNP transistors connected in a Darlington pair configuration. It is manufactured in a leaded TO-220 package, with 7.5A total current rating, and 53mΩ output on-resistance.
The DDA143TH-7 is suitable for applications such as motor or solenoid switching and current control, as well as in audio amplifiers, pre-amps, and power management systems. It is also suitable for applications where very low-noise and distortion is required, such as in medical or consumer electronics.
The operating principle of the DDA143TH-7 is that of a Darlington configuration. In this configuration, two BJTs are connected in series, with the second one having a much higher current gain than the first. The common-emitter terminals of the two BJTs form a single output, with the output current being determined by the current gain of the second BJT.
The DDA143TH-7 has two internal emitter degeneration resistors, which help to improve the performance and reduce the impact of temperature drift on the transistor current gain. The resistors also increase the stability of the device and reduce the power dissipation. In addition, the output current is controlled by the base current of the device, which is adjustable using external components.
The DDA143TH-7 is designed for low-power applications and can operate using a single supply voltage of up to 40V. The device is also designed to operate over a wide temperature range (-55°C to 150°C). The total current rating for the device is 7.5A, with a 53mΩ output on-resistance. The device has an insulation resistance of 1.5kV and a dielectric strength of 1.5kV.
In summary, the DDA143TH-7 is a Pre-Biased BJT array device designed for low-power applications. It consists of two NPN and two PNP transistors connected in a Darlington configuration, and is manufactured in a leaded TO-220 package. It offers 7.5A total current rating, with 53mΩ output on-resistance, as well as excellent insulation and dielectric strength. Its operating principle is based on the Darlington configuration, with internal emitter degeneration resistors that help to improve the performance and reduce the power dissipation.
The specific data is subject to PDF, and the above content is for reference
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