Allicdata Part #: | DDA114TK-7-F-ND |
Manufacturer Part#: |
DDA114TK-7-F |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS DUAL PNP SOT26 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | DDA114TK-7-F Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05489 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDA114 |
Supplier Device Package: | SOT-26 |
Package / Case: | SOT-23-6 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 100µA, 1mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DDA114TK-7-F is a pre-biased array of eight Bipolar Junction Transistors (BJTs) designed for use in wide-ranging applications. The DDA114TK-7-F is a low cost and high performance integrated device that is suitable for various application circuits. It is a small-signal transistor with a pre-biased base-emitter voltage of 0.7V, making it ideal for applications involving low power and high speed.
The device includes two NPN power transistors (A and B) along with six PNP switching transistors (C-F). The NPN transistors provide the majority of the current capability, while the PNP transistors provide switching capabilities to allow a wider range of applications. The device is enclosed in a single package with eight pins for easy design and layout.
The DDA114TK-7-F can be used in a variety of applications, from high speed data acquisition, to RF applications. It can also be used in applications such as switching power supplies and amplifiers. The device has a low operating current, making it suitable for the most demanding applications. Additionally, the device has an operating voltage range up to 30V, providing a high degree of flexibility.
The device\'s working principle is fairly simple. It is based on the basic principle of an NPN transistor, which is to allow current flow between the collector and the emitter when a voltage is applied to the base. When the base voltage is increased, the current flow between the collector and the emitter increases. When the base voltage is decreased, the current flow between the collector and the emitter decreases.
The DDA114TK-7-F is designed to work together with other transistors to create a larger circuit. The device is designed in such a way that it can be used as either a NPN or PNP transistor array, depending on the requirements of the circuit. The device features a built-in bias voltage, which helps in providing improved performance in terms of power and speed. This feature improves the overall efficiency of the device and helps reduce power consumption.
The DDA114TK-7-F is an excellent choice for a wide range of applications. Its low cost and high performance make it suitable for a variety of circuit designs. Its design makes it versatile and easy to use, with a wide range of operating voltages and currents. Furthermore, the pre-biased base-emitter voltage of 0.7V ensures that the device can operate even in low power and high speed conditions.
The specific data is subject to PDF, and the above content is for reference
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DDA114YH-7 | Diodes Incor... | -- | 1000 | TRANS PREBIAS DUAL PNP SO... |
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DDA144EU-7 | Diodes Incor... | 0.0 $ | 1000 | TRANS 2PNP PREBIAS 0.2W S... |
DDA143TU-7 | Diodes Incor... | -- | 1000 | TRANS 2PNP PREBIAS 0.2W S... |
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DDA143TU-7-F | Diodes Incor... | -- | 1000 | TRANS 2PNP PREBIAS 0.2W S... |
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