DDA114YK-7-F Allicdata Electronics
Allicdata Part #:

DDA114YK-7-F-ND

Manufacturer Part#:

DDA114YK-7-F

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PREBIAS DUAL PNP SOT26
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: DDA114YK-7-F datasheetDDA114YK-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05489
Stock 1000Can Ship Immediately
$ 0.06
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
Base Part Number: DDA114
Supplier Device Package: SOT-26
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Power - Max: 300mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): --
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DDA114YK-7-F is a pre-biased array bipolar junction transistor (BJT) which provides superior performance in a variety of applications. It is an array device comprising of two NPN and two PNP transistors in one package. The NPN transistor delivers a collector current of 150 mA and an emitter-base voltage of 6 V. The PNP transistor delivers a collector current of 10 mA and an emitter-base voltage of 5 V.

The DDA114YK-7-F array BJT is used in many applications such as amplifier stages, oscillator circuits and audio power amplifiers. It is also used in switching and logic circuits, low-power amplifiers, monostable and bistable multivibrators, constant-current sources and voltage regulators. Its pre-biased configuration provides superior performance in multiple applications.

The working principle of the DDA114YK-7-F array BJT can be explained by understanding the operation of a single transistor. In a single transistor, the operation relies on the PN junction formed between the emitter and the base. When a forward bias is applied to this junction, a small current starts to flow, which gradually increases with increasing voltage. This current is responsible for collector current in a BJT. Furthermore, when current is flowing through the emitter-base junction, a voltage drop is seen across the emitter-base junction that is roughly equal to 0.7V. This voltage drop is known as the forward voltage Vbe and it determines the switching characteristics of the transistor.

The DDA114YK-7-F array BJT relies on similar principles of operation as a single transistor, but with a few differences. The main difference is that the DDA114YK-7-F array BJT has two NPN and two PNP transistors in a single package. This allows for greater current carrying capacity, higher efficiency and better operational stability. Moreover, due to the pre-biased configuration, the DDA114YK-7-F is able to handle larger and more varied pulses in a wide range of operating frequencies, making it ideal for high-frequency applications.

The DDA114YK-7-F array BJT provides superior performance in many applications due to its pre-biased configuration. Moreover, its wide range of operating frequencies and high current carrying capacity make it the ideal choice for high-frequency amplification and switching applications. Finally, the array device\'s ability to handle larger pulses and provide stable performance make it an excellent choice for applications such as audio power amplifiers, oscillator circuits, logic and switching circuits, and more.

The specific data is subject to PDF, and the above content is for reference

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