DDA122LU-7-F Allicdata Electronics
Allicdata Part #:

DDA122LU-7-F-ND

Manufacturer Part#:

DDA122LU-7-F

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS 2PNP PREBIAS 0.2W SOT363
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: DDA122LU-7-F datasheetDDA122LU-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06833
Stock 1000Can Ship Immediately
$ 0.08
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V
Base Part Number: DDA122
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Power - Max: 200mW
Frequency - Transition: 200MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 220 Ohms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DDA122LU-7-F is a bi-polar (BJT) array pre-biased transistor featuring a full enhancement mode P-channel MOSFET with an integrated diode for reverse-battery protection. This FET is designed for simple and efficient logic level power supply gate control of high voltage and power supplies in a wide range of applications. As a result, the DDA122LU-7-F is a highly desirable option for low-voltage and low-current applications.

The DDA122LU-7-F is designed to be used in a variety of devices for a wide range of applications. Its main uses include motor control, load regulation and protection, and data switching applications. Additionally, the device can be used to control LED lighting systems, low-voltage DC-DC converters, and adjustable power supplies. The device also has a wide common-mode rejection ratio, making it particularly suitable for communication applications and other similar systems.

The workings of the DDA122LU-7-F revolve around its integrated power MOSFET, p-channel MOSFET, and protective diode, which when utilized together effectively allow for the management of logic levels for power supplies. This allows for the precise and efficient regulation of these supplies, component monitoring and protection, as well as data switching applications.

The operation of the DDA122LU-7-F can be broken down into three specific parts. Firstly, the integrated p-channel MOSFET is responsible for the main switch functionality that provides the power supply switching. The integrated diode is then responsible for the reverse-battery protection of the device. Finally, the pre-biased output pin along with the integrated MOSFET is responsible for the logic level input voltage necessary for switching the power supplies.

The advantages of using the DDA122LU-7-F are numerous. For starters, it has a low quiescent current, meaning that it does not consume much power. It also has a small form factor, which makes it ideal for applications that require a large number of transistors in a small footprint. The device also features a low output resistance, allowing for lower losses when converting logic level signals. Finally, the device operates at very low supply voltages, making it well suited for applications that require a low-voltage signal.

All-in-all, the DDA122LU-7-F is a highly versatile and efficient pre-biased bi-polar (BJT) transistor array. Its integrated power MOSFET, p-channel MOSFET, and integrated diode abilities allow for logic level power supply gate control and switching. In addition, its small form factor, low quiescent current, low output resistance, and low-voltage operation make it a preferred option for numerous forms of applications, especially those in motor control, load regulation and protection, data switching, and communication applications.

The specific data is subject to PDF, and the above content is for reference

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