Allicdata Part #: | DDA122TU-7-F-ND |
Manufacturer Part#: |
DDA122TU-7-F |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS 2PNP PREBIAS 0.2W SOT363 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | DDA122TU-7-F Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06833 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | DDA122 |
Supplier Device Package: | SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 200mW |
Frequency - Transition: | 200MHz |
Current - Collector Cutoff (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 220 Ohms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DDA122TU-7-F is a high-performance NPN and PNP pre-biased arrays designed for use with up to 16 channels in industrial applications. The device enables excellent control of currents and is suitable for driving high load power transistors, such as motor drives, output stages of motor controller systems, etc. The device is equipped with high-power junction- and planar-type transistor technologies. Due to its unique design, the device is capable of switching large currents, maximizing outputs and optimizing system performance.
The device works on the concepts of bipolar junction transistors (BJTs). A BJT consists of two or more semiconductor diodes joined together and forms the basis for a transistor. A BJT is used to amplify or switch electric signals. It primarily works by controlling the flow of current from the collector to the emitter, based on the amount of current supplied to the base. In the case of the DDA122TU-7-F, the base current is pre-biased to a certain level, allowing a specific amount of current to flow through the emitter-collector circuit.
The design of the DDA122TU-7-F also enables excellent heat dissipation, which is essential for all semiconductor applications. This is achieved by the dielectric-filled package, the planar layout of the die and the transistor configuration, which all help to reduce the amount of power lost in the junction. The package also includes integrated ESD protection, which further enhances the reliability and safety of the device.
The DDA122TU-7-F has an important application for high-temperature applications. It is rated for operating temperatures between -55°C and 200°C, with a storage temperature range of -55°C to 175°C. Furthermore, the device has a high tolerance to voltage levels, which allows it to be used in demanding applications. The wide operating temperature range and the high voltage withstand capability of the device make it a suitable choice for the output stages of motor controllers, inverters, and pumps.
In short, the DDA122TU-7-F is a high-performance pre-biased NPN and PNP arrays suitable for applications such as motor drives and motor controller systems. Its unique design enables excellent current control and power dissipation, while also allowing it to be used in high-temperature applications. The device has built-in ESD protection and is capable of operating in a wide range of voltages and temperatures, making it the ideal choice for many types of industrial applications.
The specific data is subject to PDF, and the above content is for reference
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