Allicdata Part #: | DDA114YH-7DITR-ND |
Manufacturer Part#: |
DDA114YH-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PREBIAS DUAL PNP SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | DDA114YH-7 Datasheet/PDF |
Quantity: | 1000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 10mA, 5V |
Base Part Number: | DDA114 |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | -- |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DDA114YH-7 is a semiconductor transistor device manufactured by Mitsubishi. It belongs to a type of transistor known as a Bipolar Junction Transistor (BJT) array, which is composed of two or more individual BJT transistors connected in a certain way to form a single component. In particular, the DDA114YH-7 is a pre-biased transistor array, meaning the individual BJT transistors are already connected together and biased with a certain amount of voltage for optimal operation.
A BJT array is an integrated circuit composed of multiple transistors connected together in a common emitter configuration. This type of transistor has some advantages over single transistor applications due to its geometry and electrical properties. A BJT array can provide higher current and voltage than a single transistor, as well as greater degrees of amplification.
The DDA114YH-7 is designed for high-frequency switching applications. It offers low input offset voltage, high current gain and fast switching times, making it suitable for use in high-speed applications such as data communications and digital switching systems. Additionally, the device has a low on-resistance rating of 5Ω, ensuring that it can swap between high and low states quickly.
The DDA114YH-7 has a wide operating temperature range of -55°C to +150°C, enabling it to remain reliable in extreme temperatures. Additionally, the device is capable of operating at low power ratings and has an exceptionally low leakage current of 1µA for reduced power consumption.
The DDA114YH-7 is often used in switching power supplies, motor controllers, and other power applications. In particular, the device can be used to increase the frequency of switching signals in power inverters, UPS systems, and variable-speed drive systems. The device is also commonly used in audio and video receivers, oscillators, and digital logic circuits.
The DDA114YH-7’s working principle is based on the principle of transistor switching. The device works by switching current between two different states – high and low. This can be done by applying a certain amount of voltage, which causes the BJT transistors in the array to switch their states and redirect the current accordingly.
In summary, the DDA114YH-7 is a highly efficient pre-biased BJT transistor array from Mitsubishi. The device is ideal for high-frequency switching applications due to its low on-resistance rating and fast switching times. Additionally, the device has a wide temperature operating range and low leakage current, making it suitable for low-power applications. The device’s working principle is based on the principle of BJT transistor switching. As a result, it is commonly used in switching power supplies, motor controllers, audio and video receivers, oscillators, and other applications.
The specific data is subject to PDF, and the above content is for reference
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