DMP2075UFDB-7 Allicdata Electronics
Allicdata Part #:

DMP2075UFDB-7DITR-ND

Manufacturer Part#:

DMP2075UFDB-7

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 20V 6UDFN
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 3.8A (Ta) 700m...
DataSheet: DMP2075UFDB-7 datasheetDMP2075UFDB-7 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.09551
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)
Description

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The DMP2075UFDB-7 is a vertical four-gate array field-effect transistor for low noise amplification and general device applications. It consists of four gates and functions as an individual unit with all four gates connected in the same environment. The device is made up of silicon-gate MOSFETs, which have a very low input capacitance and unmatched gate-source capacitance. This makes it suitable for low-noise amplification and allows a higher frequency of operation compared to other FETs.

The working principle behind the DMP2075UFDB-7 involves the use of a dual-gate array controlling current flow. The first gate acts as an input and will allow current to flow through the device when a positive voltage is applied. The second gate is controlled by the positive voltage of the first gate and functions as an output for current. In this way, current can be flow through the device even when the voltage from the input gate is removed.

The DMP2075UFDB-7 can be used in a wide range of applications. These include filtering, signal processing, precision analog circuits, low-noise amplifiers, high frequency amplifiers, and power amplifiers. The device is also ideal for use in large-signal amplifier applications, where its four-gate configuration provides excellent stability and high gain. Additionally, the device can be used in automotive, medical, and military applications.

The benefits of using the DMP2075UFDB-7 in any application include its low noise, high performance, and low power consumption. The device is highly reliable and can withstand the harsh operating conditions of many applications. It is also easy to use and can be integrated into various system designs. Furthermore, the device can work in low-temperature environments, making it suitable for use in extreme conditions.

In summary, the DMP2075UFDB-7 is a vertical four-gate array field-effect transistor designed for low-noise amplification and general device applications. It is made up of silicon-gate MOSFETs and can provide very low input capacitance and unmatched gate-source capacitance, making it suitable for low-noise amplification. The device can be used in many different applications, including filtering, signal processing, precision analog circuits, low-noise amplifiers, high frequency amplifiers, and power amplifiers. Additionally, the device is highly reliable, easy to use, and can work in low-temperature environments, making it perfect for use in extreme conditions.

The specific data is subject to PDF, and the above content is for reference

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