DMP2065UFDB-13 Allicdata Electronics
Allicdata Part #:

DMP2065UFDB-13-ND

Manufacturer Part#:

DMP2065UFDB-13

Price: $ 0.12
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2 P-CH 4.5A UDFN2020-6
More Detail: Mosfet Array 2 P-Channel (Dual) 4.5A (Ta) Surfac...
DataSheet: DMP2065UFDB-13 datasheetDMP2065UFDB-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.10397
Stock 1000Can Ship Immediately
$ 0.12
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)
Description

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The DMP2065UFDB-13 is an FET array module that provides engineers with a reliable solution for a range of applications. The module\'s compact form factor, low power dissipation, and industry-leading drain-source voltage (Vds) make it an ideal choice for a wide variety of projects. With its integrated Gate-Source FET array, engineers can easily implement complex logic functions in a wide range of applications.When connected to the DMP2065UFDB-13, the Gate-Source FET array will control the flow of electric current from the source to the drain. This module offers a high drain-source voltage and low power dissipation. As such, it is suitable for a wide range of applications, such as driving motors, controlling lighting systems, and providing power delivery solutions.The design of the module is straightforward and efficient. The Gate-Source FET array is composed of fourteen transistors. Each transistor is connected in a source-follower configuration, with its source connected to ground, and drain connected to the drive voltage source. The gate of each FET is driven by respective voltage sources. By controlling the voltage source connected to the gate of each FET, the engineer can control the flow of current through the device and determine the amount of power delivered to the load. The DMP2065UFDB-13 is designed with a low power dissipation and high drain-source voltage. As such, it can be integrated into a wide range of applications where loads are driven at relatively high voltages. Its low power dissipation and integrated voltage sources also enable engineers to create efficient solutions for power delivery solutions. The module is also well-suited for applications that require fast switching speeds, such as those used in high speed robots and automotive applications.The module also offers protection against over-current or short-circuiting, as well as protection against low voltage inputs and high voltage outputs. This ensures that the device is able to operate reliably in a wide range of applications. Additionally, the module is designed to meet the requirements of automotive applications and has been tested to meet the AEC-Q100 reliability standards. In summary, the DMP2065UFDB-13 is an ideal solution for a wide range of applications. Its high drain-source voltage, low power dissipation, and robust design make it an ideal choice for projects requiring reliable power delivery solutions. The module is also well-suited for applications that require fast switching speeds and can easily be integrated into automotive systems due to its robust design and adherence to AEC-Q100 reliability standards.

The specific data is subject to PDF, and the above content is for reference

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