DMP2018LFK-7 Allicdata Electronics
Allicdata Part #:

DMP2018LFK-7DITR-ND

Manufacturer Part#:

DMP2018LFK-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 20V 9.2A 6-DFN
More Detail: P-Channel 20V 9.2A (Ta) 1W (Ta) Surface Mount U-DF...
DataSheet: DMP2018LFK-7 datasheetDMP2018LFK-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 4748pF @ 10V
FET Feature: --
Power Dissipation (Max): 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U-DFN2523-6
Package / Case: 6-PowerUDFN
Description

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The DMP2018LFK-7 FET belongs to the family of field effect transistors, one of the families of transistors commonly found in electronic circuits. This particular type is a single-channel enhancement-mode MOSFET, used as a switch or amplifier in many electronics circuits. This article will discuss the application field and working principle of the DMP2018LFK-7 FET.

The DMP2018LFK-7 FET is a single-channel enhancement-mode MOSFET. It is made of an N-channel enhancement-mode MOSFET, with an option of a P-channel enhancement-mode MOSFET. It has an on-state drain current rating of 150mA and an on-state gate-source voltage rating of 2.5V. This transistor has a maximum gate threshold voltage of -2 volts and a maximum on-state resistance of 100 ohms.

The DMP2018LFK-7 FET has many different application fields. The most common application of this transistor is as a switch or amplifier in electronic circuits. It can be used for controlling the flow of electricity in a circuit, such as switching on and off a fan or a motor. It can also be used as an amplifier, to increase the power of a signal. In audio amplifiers, this transistor is used to amplify the signal from an audio source before sending it out to speakers.

The working principle of the DMP2018LFK-7 FET is based on the behavior of an N-channel MOSFET. The transistor contains an N-channel, which is a region between two metal oxide semiconductor layers. When a voltage is applied to the gate of the transistor, it creates a field effect, which causes electrons to be drawn toward the gate. This creates a region of negative charges and attracts positive charges, resulting in the transistor turning on. To turn off the transistor, the voltage is reversed, causing the electrons to be repelled from the gate and the transistor to turn off.

The DMP2018LFK-7 FET is mainly used for switching or amplifying electronic signals. It is one of the most commonly used transistors for these purposes, due to its size and cost efficiency. The ability to regulate the current flow in a circuit with minimal losses makes it ideal for use in many electronics projects. The transistor is also widely used in audio amplifiers due to its high degree of accuracy and reliability.

In conclusion, the DMP2018LFK-7 FET belongs to the family of field effect transistors, more specifically is a single-channel enhancement-mode MOSFET. It has many applications, such as switching and amplifying circuits, and is often used in audio amplifiers. The working principle of this transistor is based on the behavior of an N channel MOSFET, and it is very efficient and cost effective.

The specific data is subject to PDF, and the above content is for reference

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