DMP2066LVT-13 Datasheet/PDFThe DMP2066LVT-13 is a P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) intended for use in a variety of industrial applications. The DMP2066LVT-13 makes use of MOSFET’s asymmetrical structure to protect the device from damage due to over-voltage and other adverse conditions. It is particularly useful in handling large signal swings and offers superior performance in situations where high currents or voltages are involved. The device can also be used effectively in situations where the signal swing is low but the signal swing times are extremely long, such as communications systems. Due to its low on-state resistance and good ruggedness, the device is ideal for high-traffic applications where fast switching performance is desired.
The DMP2066LVT-13 is a single, low-voltage transistor, which features a maximum drain-source breakdown voltage (VDS) of 13V. Maximum drain current (IDS) of the device is 4.5A. It offers very high transconductance (approximately 469 mS) and its output capacitance is very low (typically 9.4pF). The DMP2066LVT-13 works over a temperature range of -55 to 125°C and can handle large voltage and current swings.
The working principle of the DMP2066LVT-13 is based on the basic MOSFET functioning, which is primarily based on the movement of electrons between the source and drain contact due to the electric field. As the electric field increases, the movement of charges (electrons or holes) increases. When the gate voltage is increased to a certain level, the drain-source current (IDS) will reach the maximum value.
Generally speaking, the MOSFET works as a voltage-controlled resistor. However, unlike a conventional resistor, the MOSFET can be used to control large loads with very low on-state resistance, thus enabling it to save power. This property of power savings makes the MOSFET ideal for industrial applications such as switching, phase control, speed control, and protection circuits.
Common uses of DMP2066LVT-13 include solid-state switching, power control, and protection against over-voltage and under-voltage conditions. The device is also used in switching power supplies, DC/DC converters, voltage-controlled attenuators, and pulse transformer interfaces. Additionally, the device is well suited for use in high-power transceivers and power amplifiers.
In conclusion, the DMP2066LVT-13 is a single, low-voltage P-Channel MOSFET with a wide range of applications. Its high transconductance and low on-state resistance make it an ideal choice for power control and protection against over-voltage and under-voltage conditions. Its versatility and low power consumption make it an excellent choice for a variety of industrial applications.