
DMP2004TK-7 Discrete Semiconductor Products |
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Allicdata Part #: | DMP2004TKDITR-ND |
Manufacturer Part#: |
DMP2004TK-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 20V 0.43A SOT-523 |
More Detail: | P-Channel 20V 430mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 6000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 175pF @ 16V |
Vgs (Max): | ±8V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 430mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 430mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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DMP2004TK-7 is a N-Channel Enhancement Mode MOSFET, which has been produced by the renowned semiconductor mobile technology manufacturing company Dongguan Mebo Microelectronics Technology Co, Ltd. It is part of the TG MOSFET product line. The transistor applications of the DMP2004TK-7 encompass such varied areas as power management and audio amplifying applications.
The DMP2004TK-7 has a number of specifications that make it a suitable choice for a range of power switches, audio amplifiers and other devices. The breakdown voltage is 10V, where the drain current for both continuous and pulsed operation is 20A and 40A respectively. The maximum trans-conductance of the device is 0.132mho and maximum static drain-source on-state resistance of 0.008ohms. The gate threshold voltage is 5.6V, the threshold gate-source voltage is 0.6V and the overall capacitance between the drain and source of the DMP2004TK-7 is 35pF.
The DMP2004TK-7 has a number of features that make it suitable for various transistor applications. It has a low on-state resistance and low gate source resistance. This makes it suitable for high-side far driver, power management and switching applications. The device is also suitable for providing protection in audio amplifiers, as its low threshold voltage makes it reliable in such applications.
The working principle of the DMP2004TK-7 is based on the MOSFET structure and its inherent characteristics. The device contains an insulated gate field-effect transistor that is used to control the current flow between source and drain. The amount of current that is allowed to flow is controlled by varying the amount of voltage applied to the gate. Increasing the voltage applied to the gate, increases the current flow between the source and the drain.
In the DMP2004TK-7, the gate-source feedback is used to provide protection against over-voltage and over-current conditions. This feedback helps to protect the device from becoming damaged due to excessive voltage or current, ensuring the longevity of the device. The feedback also ensures that the device will operate properly even under conditions of high temperatures and severe vibration.
The device can also be used in a variety of other applications, including as a protection element in power management circuits, as a switch in various low-level power applications, and as an input stage stage in audio amplifiers.
In summary, the DMP2004TK-7 is a N-Channel Enhancement Mode MOSFET, specifically designed for power switches, audio amplifiers and other devices. It has a low on-state resistance and low gate source resistance, making it suitable for high-side far driver, power management and switching applications. Its low threshold voltage makes it suitable for protection in audio amplifiers. The device can also be used in a variety of other applications including protection element in power management circuits and as a switch in various low-level power applications.
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