DMP25H18DLFDE-13 Allicdata Electronics
Allicdata Part #:

DMP25H18DLFDE-13DI-ND

Manufacturer Part#:

DMP25H18DLFDE-13

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 250V 0.26A DFN2020-6
More Detail: P-Channel 250V 260mA (Ta) 600mW (Ta) Surface Mount...
DataSheet: DMP25H18DLFDE-13 datasheetDMP25H18DLFDE-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.40804
Stock 1000Can Ship Immediately
$ 0.46
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type E)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 600mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 25V
Vgs (Max): ±40V
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMP25H18DLFDE-13 is a silicon N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). As a type of transistor, it can control a large amount of electrical current simply by utilizing a small electrical signal. The N-Channel MOSFET is one of the most common types of semiconductors used in Motor Control, DC-DC conversion, consumer and automotive electronics and various other applications. This particular model is part of the same family of MOSFETs, and is suitable for a variety of operating conditions.

The DMP25H18DLFDE-13 has a maximum drain current as 25A, source and drain-to-source breakdown voltage as 20V, maximum drain-to-source on-state resistance as 65mΩ, power dissipation as 97.5W and an operating temperature range from -55°C to +150°C. Therefore, this device is suitable for circuit designs that require high-power dissipation and for applications that require high breakdown voltage and low saturation voltage.

The operating principle of the DMP25H18DLFDE-13 is based on the basic field-effect theory. When a small-signal voltage is applied between the gate and source terminals, it creates an inversion layer, which modifies the conductivity of the channel region and reduces the current flowing through the transistor. This can be used to reduce the voltage or current in the drain circuit, allowing the device to act as a voltage regulator or switch.

The DMP25H18DLFDE-13 is a popular choice for many motor control, DC-DC conversion and power supply applications. For example, this MOSFET can be used for motor control in industries such as aerospace, automotive, robotics, and manufacturing. It can also be used for power supply design, such as DC-DC converters and power supply circuits. Additionally, the DMP25H18DLFDE-13 can be used in electronic circuit design and embedded systems.

In conclusion, the DMP25H18DLFDE-13 is a high-power N-Channel MOSFET capable of controlling high current and voltage levels. It is ideal for motor control, DC-DC conversion and power supply designs, as well as applications requiring high breakdown voltage and low saturation voltage. Moreover, it has a wide operating temperature range, making it suitable for many different environments. Taking all these characteristics into account, the DMP25H18DLFDE-13 is an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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