DMP2022LSSQ-13 Allicdata Electronics
Allicdata Part #:

DMP2022LSSQ-13-ND

Manufacturer Part#:

DMP2022LSSQ-13

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET PCH 20V 9.3A 8SO
More Detail: P-Channel 20V 9.3A (Ta) 1.6W (Ta) Surface Mount 8-...
DataSheet: DMP2022LSSQ-13 datasheetDMP2022LSSQ-13 Datasheet/PDF
Quantity: 1000
1 +: $ 0.28000
10 +: $ 0.27160
100 +: $ 0.26600
1000 +: $ 0.26040
10000 +: $ 0.25200
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2575pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 60.2nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMP2022LSSQ-13 is a floating gate MOSFET (FET) N-channel MOSFET designed for use in a variety of applications. The device is available in a pulsed current limit mode, which can be used to limit the maximum current flowing through the device. The current limit mode allows it to be used in applications where a low drain-source voltage is desired while still providing a relatively large on-state current limit.

This device uses a SiO2 layer to form a floating gates between the source and the drain, which effectively acts as an insulated gate between the two. When a sufficient gate-source voltage is applied, the device will begin to conduct between the two terminals. The floating gate produces an electric field between the source and the drain, which further enhances the device\'s current carrying capability.

The DMP2022LSSQ-13 has the ability to be used in a variety of application fields. It can be used in switching applications, such as in voltage regulators, controllers, and driver circuits. It can also be used in low-power and low-noise applications, such as in audio and radio frequency circuits. Additionally, it can be used in power management circuits, such as in the control of LEDs, motors, and other power-demanding devices.

The DMP2022LSSQ-13 is capable of working with voltages up to 12V, with a typical operating voltage range from 0V to 6V. The on-state drain current can be controlled using the gate voltage, and the device could deliver up to 1A current. The device has a high input impedance, which allows it to be used in higher voltage applications.

The DMP2022LSSQ-13 has a low gate-drain capacitance, making it suitable for high-frequency applications. This is achieved by the use of a MOS dielectric, which generally produces a higher gate capacitance than other dielectrics. The device also has an ESD-resistant design, which helps to protect it from overvoltage conditions.

Overall, the DMP2022LSSQ-13 is an excellent choice for a wide range of applications, due to its current limiting features, low gate-drain capacitance, and ESD-resistant design. It is an ideal device for switching and low-noise applications, and can be used in power management circuits to control LED, motors, and other power-demanding devices.

The specific data is subject to PDF, and the above content is for reference

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