DMP2035UVTQ-7

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	35 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	23.1nC @ 4.5V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 10V
FET Feature:	--
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TSOT-26
Package / Case:	SOT-23-6 Thin, TSOT-23-6

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Introduction

The DMP2035UVTQ-7 is a MOSFET (metal-oxide semiconductor field effect transistor) package manufactured by Infineon Technologies AG. It features low on-resistance, fast switching frequency, good thermal stability, suitability for high-temperature applications, and low power consumption. The MOSFETs can be used in a number of different applications including high-speed switching, motor control, low-noise amplifiers, RF (radio frequency) amplifiers, and signal conditioning.

Design and Features

The DMP2035UVTQ-7 MOSFET is an N-channel device with a drain-source voltage of 60 V and an on-resistance of 7 mΩ. It also has a maximum current rating of 5A and a maximum operating temperature of 175°C. The package has been designed for a wide range of applications, including automotive, telecommunications, and security. The MOSFET has a typical rise time of 17 nS, a fall time of 26 nS, and a static total gate charge of 23 nC.

Working Principle

The MOSFET operates on a principle of controlling current flow between the source and drain by a gate voltage. When a positive voltage is applied to the gate, it attracts electrons, creating a conducting channel between the source and drain. This creates a low resistance path and allows current to flow. When the gate voltage is switched back to zero volts, the electrons are repelled and the channel shuts off. This principle of operation is the basis for many of the applications the MOSFET can be used for.

Applications

The DMP2035UVTQ-7 is suitable for a wide range of applications, offering excellent performance in high-speed switching, motor control, low-noise amplifiers, RF amplifiers, and signal conditioning. It is commonly used in telecommunications and automotive applications, as well as in audio amplifiers, and voltage regulators. The low-on resistance and fast switching frequency of the device make it suited for power management and portable applications.

Conclusion

The DMP2035UVTQ-7 is an N-channel MOSFET manufactured by Infineon Technologies AG. It is suitable for a range of applications and offers excellent performance, low on-resistance, fast switching frequency, good thermal stability, and low power consumption. The device’s working principle is based on controlling current flow between the source and drain by a gate voltage. This makes it well suited for a variety of applications, including telecommunications, audio amplifiers, motor control, and voltage regulators.

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