DMP2039UFDE-7

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The DMP2039UFDE-7 is a N-channel MOSFET Transistor brought to you by Infineon Technologies. It features an impressive 55 Volts drain-source breakdown and a total gate charge of just 12nC. This makes it an excellent choice for a wide range of applications, from simple switching tasks to more complex power management tasks.

In general, it can be used in low voltage, low power applications such as computers and cell phones, where it can act as a switch. It can also be used in higher voltage and higher power applications, such as solar power systems, where it can be used to regulate the flow of current. In many cases, it can be used instead of a mechanical switch, providing a more efficient and reliable solution.

The DMP2039UFDE-7 is a depletion-mode MOSFET, meaning it is normally turned off until it is activated by a current or voltage source. Specifically, it is a vertical DMOS, meaning it is made by making fabricated components on top of a silicon wafer. This makes it a more efficient and reliable solution than other devices.

The device features a drain-source breakdown voltage of 55 Volts and a total gate charge of 12nC. This means it can handle a wide range of voltage levels, making it suitable for a variety of applications. In addition, it has a low on-resistance of 7.2 mΩ and a low gate charge of just 12nC, making it a very efficient solution for power management tasks.

There are some considerations to keep in mind when using the DMP2039UFDE-7. First, it has a reverse blocking capability of <50V, meaning it can only be used in applications where the reverse voltage does not exceed this level. Second, the device is sensitive to static electricity, so it should be handled with care. Finally, it can generate heat, so proper cooling should be taken into account when integrating it into a system.

The DMP2039UFDE-7 can be used in a wide range of applications with great efficiency and reliability. Its depletion-mode nature means it is always off until it receives input, making it very easy to use and control. In addition, it features a low gate charge and a high drain-source breakdown, making it suitable for a variety of applications. Finally, its on-resistance and low gate charge make it an efficient solution for power management.

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