DMP2100UCB9-7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual) Common Source
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	3A
Rds On (Max) @ Id, Vgs:	100 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	310pF @ 10V
Power - Max:	800mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	9-UFBGA, WLBGA
Supplier Device Package:	U-WLB1515-9

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The DMP2100UCB9-7 provides a robust, advanced power MOSFET solution designed to help engineers reduce design complexity and deliver improved system performance in high-current applications. This device integrates a high-voltage power MOSFET in a single package, providing enhanced peak output power, minimizing the external circuit complexity, and enabling superior performance with reduced component count and system cost.The DMP2100UCB9-7 integrates a high-voltage (600V) N-channel power MOSFET into a single package and is part of a unified family of products from ON Semiconductor and its partners. This device is ideal for use in a wide range of applications including automotive, industrial, and consumer electronics, as well as in energy and power management.The DMP2100UCB9-7 offers several advantages for high-current switching applications over conventional discrete power MOSFETs, including improved performance and efficiency, simplified PCB layout, and reduced system cost. The device operates at a maximum frequency of 200 kHz, offers low on-state resistance, and provides up to 7A continuous drain current. Its robust design is ESD protected (up to 30KV HBM), has excellent thermal stability, and is certified for use in underhood automotive environments.The DMP2100UCB9-7 is a power MOSFET array device that consists of two N-Channel MOSFETs in a single package. It operates in an enhancement-mode, meaning it can be fully turned on (saturated) by applying the appropriate gate voltage. The two MOSFETs have separate drain and source contacts, which allows them to be used together in a "parallel" arrangement, allowing for increased current handling capability.The DMP2100UCB9-7 also includes built-in ESD protection and excellent thermal stability, making it well-suited for use in high-temperature and low-temperature environments. It also offers improved thermal tracking and higher switching frequencies, providing superior transients response with faster power delivery. The device also features a high PWM frequency, allowing it to handle higher PWM duty cycles (up to 50%) while maintaining low switching losses.The DMP2100UCB9-7 is ideal for both high-side and low-side applications. It is an ideal choice for a broad range of applications such as motor control, DC/DC converters, high-voltage inverters, isolated gate drivers, automotive safety systems, power management, and power supply controllers. Additionally, the device is well-suited for use in high-current switching applications due to its low on-state resistance, high-voltage breakdown, and high-temperature operation.In conclusion, the DMP2100UCB9-7 is an ideal solution for a wide range of high-current switching applications. The device offers a high-voltage breakdown rating, ESD protection, excellent thermal stability, and improved transients response, providing enhanced overall performance and reliability. Furthermore, its wide operating range, high PWM frequency, and low resistance make it a great choice for applications requiring power handling capability, increased efficiency, and maximum system performance.

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